Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
[HTML][HTML] Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …
[HTML][HTML] Ultrawide bandgap vertical β-(AlxGa1− x) 2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates
Ultrawide bandgap β-(Al x Ga 1− x) 2 O 3 vertical Schottky barrier diodes on (010) β-Ga 2 O
3 substrates are demonstrated. The β-(Al x Ga 1− x) 2 O 3 epilayer has an Al composition of …
3 substrates are demonstrated. The β-(Al x Ga 1− x) 2 O 3 epilayer has an Al composition of …
(AlxGa1-x) 2O3-based materials: Growth, properties, and device applications
H Li, Z Wu, S Wu, P Tian, Z Fang - Journal of Alloys and Compounds, 2023 - Elsevier
In recent years, the (Al x Ga 1-x) 2 O 3 materials have attracted intense research interest due
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …
Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of 47/51 GHz by Ion-Cutting Process
X Yu, W Xu, Y Wang, B Qiao, R Shen… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Heterointegrated Ga2O3-on-SiC radio-frequency (RF) MOSFETs with record-high frequency
performances were reported. A two-dimensional electron gas like channel with a high …
performances were reported. A two-dimensional electron gas like channel with a high …
[HTML][HTML] Temperature dependent pulsed IV and RF characterization of β-(AlxGa1− x) 2O3/Ga2O3 hetero-structure FET with ex situ passivation
In this work, we report a study of the temperature dependent pulsed current voltage and RF
characterization of β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3 hetero-structure FETs (HFETs) before and …
characterization of β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3 hetero-structure FETs (HFETs) before and …
RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs
In this Letter, we report on the enhanced radio frequency (RF) performance in sub-
micrometer scaled β-Ga 2 O 3 tri-gate FinFETs. With a 200-nm-thick β-Ga 2 O 3 bulk channel …
micrometer scaled β-Ga 2 O 3 tri-gate FinFETs. With a 200-nm-thick β-Ga 2 O 3 bulk channel …
Homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy
Y Oshima, T Oshima - Semiconductor Science and Technology, 2023 - iopscience.iop.org
We demonstrated halide vapor phase epitaxy of β-Ga 2 O 3 on a native $\left ({\bar
102}\right) $ substrate, which should be scalable and useful for the formation of vertical fins …
102}\right) $ substrate, which should be scalable and useful for the formation of vertical fins …