In this paper, a coupled-inductor-based LCC resonant converter with the primary-parallel–
secondary-series (PPSS) configuration is proposed to achieve output-voltage sharing ability …

This paper systematically investigates the influence of device parameters spread on the
current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient …

In medium-and high-power-density applications, silicon carbide (SiC) metal-oxide
semiconductor field effect transistors (MOSFETs) are often connected in parallel increasing …

Silicon carbide (SiC) MOSFETs tend to become one of the main switching elements in
power electronics applications of medium-and high-power density. Usually, SiC MOSFETs …

摘要并联应用SiC MOSFET 是一种适应大功率变流场景的有效方案, 但是容易出现器件电流不
均衡现象. 该文根据一款分立器件并联型逆变器出现的静态不均流问题, 在建立的寄生参数模型 …

由于开关速度非常快, 多芯片并联碳化硅(silicon carbide, SiC) 功率模块的电压,
电流振荡问题比硅(silicon, Si) 器件更加突出, 对寄生参数的要求也更高. 然而 …

摘要新能源车用的电机控制器通常通过大功率模块来完成, 但大功率模块一般成本比较高,
体积比较大, 资源也有限. 本文基于SiC MOSFET 分立器件并联设计实现了一种高功率密度电机 …

Nowadays, medium-and high-power applications make use of silicon carbide (SiC)
MOSFETs, and many times their parallelization is necessary. Unfortunately, this requirement …

The dynamic and static imbalance of parallel current sharing has held the concern of
researchers in view of the variation in multiple parasitic parameters on high-frequency …

In order to adapt to the application scenarios of high power variable current, it is an effective
solution to parallel multiple silicon carbide (SiC) power. However, the static parameters of …