Low dielectric constant materials for microelectronics
The ever increasing requirements for electrical performance of on-chip wiring has driven
three major technological advances in recent years. First, copper has replaced Aluminum as …
three major technological advances in recent years. First, copper has replaced Aluminum as …
Phase change materials
S Raoux - Annual Review of Materials Research, 2009 - annualreviews.org
Phase change materials (PCMs) can exist in at least two different phases (an amorphous
and one or more crystalline phases), and they can be switched repeatedly between these …
and one or more crystalline phases), and they can be switched repeatedly between these …
Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
RN Vrtis, ML O'neill, JL Vincent, AS Lukas… - US Patent …, 2012 - Google Patents
4,105,821 A 8, 1978 Blaich et al. 5,296,624 A 3, 1994 Larson et al. 6,054,206 A 4/2000
Mountsier 6,068,884 A 5, 2000 Rose et al. 6,171,945 B1 1/2001 Mandal et al. 6,238,751 B1 …
Mountsier 6,068,884 A 5, 2000 Rose et al. 6,171,945 B1 1/2001 Mandal et al. 6,238,751 B1 …
Chemical mechanical planarization: slurry chemistry, materials, and mechanisms
M Krishnan, JW Nalaskowski, LM Cook - Chemical reviews, 2010 - ACS Publications
The concept of chemical mechanical planarization (CMP) was invented in IBM in the early
1980s by Klaus D. Beyer in an attempt to create a highly planar surface and enable …
1980s by Klaus D. Beyer in an attempt to create a highly planar surface and enable …
Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
A Grill, DA Neumayer - Journal of applied physics, 2003 - pubs.aip.org
Carbon doped oxide dielectrics comprised of Si, C, O, and H (SiCOH) have been prepared
by plasma enhanced chemical vapor deposition (PECVD) from mixtures of …
by plasma enhanced chemical vapor deposition (PECVD) from mixtures of …
Chemical mechanical planarization for microelectronics applications
PB Zantye, A Kumar, AK Sikder - Materials Science and Engineering: R …, 2004 - Elsevier
The progressively decreasing feature size of the circuit components has tremendously
increased the need for the global surface planarization of the various thin film layers that …
increased the need for the global surface planarization of the various thin film layers that …
Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
RN Vrtis, ML O'neill, JL Vincent, AS Lukas… - US Patent …, 2005 - Google Patents
A method for providing a porous organosilica glass (OSG) film that consists of a single
phase of a material represented by the formula SivOwCxHyFz, v+ w+ x+ y+ z= 100%, v is …
phase of a material represented by the formula SivOwCxHyFz, v+ w+ x+ y+ z= 100%, v is …
[HTML][HTML] Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art
The improved performance of the semiconductor microprocessors was achieved for several
decades by continuous scaling of the device dimensions while using the same materials for …
decades by continuous scaling of the device dimensions while using the same materials for …
Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
SM Gates, A Grill, DR Medeiros, D Neumayer… - US Patent …, 2006 - Google Patents
US7049247B2 - Method for fabricating an ultralow dielectric constant material as an
intralevel or interlevel dielectric in a semiconductor device and electronic device made …
intralevel or interlevel dielectric in a semiconductor device and electronic device made …
Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials
A Grill - Journal of Applied Physics, 2003 - pubs.aip.org
Carbon doped oxide dielectrics comprised of Si, C, O, and H (SiCOH) have been prepared
by plasma enhanced chemical vapor deposition. Low-k films with a dielectric constant (k) of …
by plasma enhanced chemical vapor deposition. Low-k films with a dielectric constant (k) of …