Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces
The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
The role of surface kinetics on composition and quality of AlGaN
Abstract Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and
sapphire substrates. The role of surface morphology and surface kinetics on AlGaN …
sapphire substrates. The role of surface morphology and surface kinetics on AlGaN …
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
Combination of sputter deposition and high-temperature annealing is a promising technique
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
[HTML][HTML] Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches
In this work, we explored the growth regime of (100) β-Ga 2 O 3 homoepitaxial films on
substrates with different miscut angles (1, 2, and 4) in the MOVPE system. Under a low O …
substrates with different miscut angles (1, 2, and 4) in the MOVPE system. Under a low O …
Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation
T Li, W Luo, S Liu, J Yang, R Tao… - Advanced Functional …, 2023 - Wiley Online Library
AlGaN‐based ultraviolet‐B light‐emitting diodes (UVB‐LEDs) exhibit great potential in
phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However …
phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However …
[HTML][HTML] Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates
The evolution of surface morphology for single-crystal bulk Al-polar aluminum nitride
substrates during ex situ cleaning, in situ cleaning, and subsequent homoepitaxy is …
substrates during ex situ cleaning, in situ cleaning, and subsequent homoepitaxy is …
Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD
In this work, based on physical vapor deposition and high-temperature annealing (HTA), the
4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal …
4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal …