Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials
Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …
approaching the unit cell level. When this spatial confinement is combined with observations …
Physics and applications of charged domain walls
PS Bednyakov, BI Sturman, T Sluka… - npj Computational …, 2018 - nature.com
The charged domain wall is an ultrathin (typically nanosized) interface between two
domains; it carries bound charge owing to a change of normal component of spontaneous …
domains; it carries bound charge owing to a change of normal component of spontaneous …
Nonvolatile ferroelectric domain wall memory
Ferroelectric domain walls are atomically sharp topological defects that separate regions of
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …
Sub‐Nanosecond Reconfiguration of Ferroelectric Domains in Bismuth Ferrite
B Guzelturk, T Yang, YC Liu, CC Wei… - Advanced …, 2023 - Wiley Online Library
Abstract Domain switching is crucial for achieving desired functions in ferroic materials that
are used in various applications. Fast control of domains at sub‐nanosecond timescales …
are used in various applications. Fast control of domains at sub‐nanosecond timescales …
Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
Impurity elements used as dopants are essential to semiconductor technology for controlling
the concentration of charge carriers. Their location in the semiconductor crystal is …
the concentration of charge carriers. Their location in the semiconductor crystal is …
Non-Ising and chiral ferroelectric domain walls revealed by nonlinear optical microscopy
S Cherifi-Hertel, H Bulou, R Hertel, G Taupier… - Nature …, 2017 - nature.com
The properties of ferroelectric domain walls can significantly differ from those of their parent
material. Elucidating their internal structure is essential for the design of advanced devices …
material. Elucidating their internal structure is essential for the design of advanced devices …
Large and accessible conductivity of charged domain walls in lithium niobate
Ferroelectric domain walls are interfaces between areas of a material that exhibits different
directions of spontaneous polarization. The properties of domain walls can be very different …
directions of spontaneous polarization. The properties of domain walls can be very different …
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is
required to miniaturize electronic devices. Direct visualization of stable ferroelectric …
required to miniaturize electronic devices. Direct visualization of stable ferroelectric …
Real-time studies of ferroelectric domain switching: a review
Ferroelectric materials have been utilized in a broad range of electronic, optical, and
electromechanical applications and hold the promise for the design of future high-density …
electromechanical applications and hold the promise for the design of future high-density …
[PDF][PDF] Giant resistive switching via control of ferroelectric charged domain walls
DOI: 10.1002/adma. 201600160 conductivity is thermally activated and the current is
therefore very low. On the other hand, charged domain walls (CDWs) that break polarization …
therefore very low. On the other hand, charged domain walls (CDWs) that break polarization …