Organosilicon films deposited in low-pressure plasma from hexamethyldisiloxane—A review
We present a review of low-pressure plasma-enhanced chemical vapor deposition (PECVD)
with the hexamethyldisiloxane (HMDSO) precursor for production of organosilicon thin films …
with the hexamethyldisiloxane (HMDSO) precursor for production of organosilicon thin films …
Plasma processes for depositing low dielectric constant films
D Cheung, WF Yau, RP Mandal, S Jeng… - US Patent …, 2001 - Google Patents
A method and apparatus for depositing a low dielectric constant film by reaction of an
organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W …
organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W …
Method of making low κ dielectric inorganic/organic hybrid films
P Rose, E Lopata, J Felts - US Patent 6,068,884, 2000 - Google Patents
[57] ABSTRACT A method of depositing a dielectric? lm exhibiting a loW dielectric constant
in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided …
in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided …
Plasma processes for depositing low dielectric constant films
D Cheung, WF Yau, RP Mandal, S Jeng… - US Patent …, 2002 - Google Patents
A method and apparatus for depositing a low dielectric constant film by reaction of an
organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W …
organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W …
CVD plasma assisted low dielectric constant films
D Cheung, WF Yau, RR Mandal - US Patent 6,287,990, 2001 - Google Patents
(57) ABSTRACT A method and apparatus for depositing a low dielectric constant film by
reaction of an organosilane or organosilox ane compound and an oxidizing gas at a low RF …
reaction of an organosilane or organosilox ane compound and an oxidizing gas at a low RF …
Method of depositing low k films using an oxidizing plasma
TF Huang, YC Lu, LQ Xia, E Yieh, WF Yau… - US Patent …, 2003 - Google Patents
A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon
compound to deposit films having a carbon content of at least 1% by atomic weight. Films …
compound to deposit films having a carbon content of at least 1% by atomic weight. Films …
Thin plasma-polymerized layers of hexamethyldisiloxane for humidity sensor development
The response of resistive-type sensors based on thin hexamethyldisiloxane layers to relative
humidity (RH) was evaluated. Humidity sensitive layers were plasma polymerized at low …
humidity (RH) was evaluated. Humidity sensitive layers were plasma polymerized at low …
CVD plasma assisted low dielectric constant films
D Cheung, WF Yau, RR Mandal - US Patent 6,537,929, 2003 - Google Patents
ABSTRACT A method and apparatus for depositing a low dielectric constant film by reaction
of an organosilane or organosilox ane compound and an oxidizing gas at a low RF power …
of an organosilane or organosilox ane compound and an oxidizing gas at a low RF power …
Method of depositing a low K dielectric with organo silane
WF Yau, D Cheung, S Jeng, K Liu, YC Yu - US Patent 6,511,909, 2003 - Google Patents
US6511909B1 - Method of depositing a low K dielectric with organo silane - Google Patents
US6511909B1 - Method of depositing a low K dielectric with organo silane - Google Patents …
US6511909B1 - Method of depositing a low K dielectric with organo silane - Google Patents …
Low κ dielectric inorganic/organic hybrid films and method of making
P Rose, E Lopata, J Felts - US Patent 7,901,783, 2011 - Google Patents
(57) ABSTRACT A method of depositing a dielectric film exhibiting a low dielectric constant
in a semiconductor and/or integrated cir cuit by chemical vapor deposition (CVD) is …
in a semiconductor and/or integrated cir cuit by chemical vapor deposition (CVD) is …