Asymmetrically engineered nanoscale transistors for on-demand sourcing of terahertz plasmons
Terahertz (THz) plasma oscillations represent a potential path to implement ultrafast
electronic devices and circuits. Here, we present an approach to generate on-chip THz …
electronic devices and circuits. Here, we present an approach to generate on-chip THz …
Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy
Detailed spectral structures in the low-temperature photoluminescence (3.5 K) of an InAlAs
random alloy grown by molecular beam epitaxy on an InP substrate were studied, with three …
random alloy grown by molecular beam epitaxy on an InP substrate were studied, with three …
Nonequilibrium Hot-Carrier Transport in Type-II Multiple Quantum Wells for Solar-Cell Applications
HP Piyathilaka, R Sooriyagoda, VR Whiteside… - Physical Review …, 2022 - APS
Prototypes for hot-carrier solar cells based on type-II InAs/AlAs 0.16 Sb 0.84 multiple
quantum wells are examined with ac photoconductivity as a function of lattice temperature …
quantum wells are examined with ac photoconductivity as a function of lattice temperature …
The role of remote valleys in photovoltaic devices
A Sharma - 2023 - unsworks.unsw.edu.au
Hot carriers in semiconductors are charge carriers with significant excess kinetic energy
above the band edge, typically corresponding to a carrier temperature greater than the …
above the band edge, typically corresponding to a carrier temperature greater than the …
[引用][C] Pre-themalizational effect of hot carriers on photovoltage formation in a solar cell
O Masalskyi, J Gradauskas - Ukrainian journal of …, 2022 - Institute of Physical Optics