Assessment of junction termination extension structures for ultrahigh-voltage silicon carbide pin-diodes; a simulation study
D Johannesson, M Nawaz… - IEEE Open Journal of …, 2021 - ieeexplore.ieee.org
The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices
consumes a considerable part of the semiconductor chip area. The JTE area is closely …
consumes a considerable part of the semiconductor chip area. The JTE area is closely …
Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices
L Geng, R Yue, Y Wang - Microelectronics Journal, 2024 - Elsevier
A step-etched space-modulated junction termination extension (SE-SM-JTE) is proposed for
ultrahigh voltage (≥ 10 kV) 4H-SiC devices in this work. The proposed structure creates a …
ultrahigh voltage (≥ 10 kV) 4H-SiC devices in this work. The proposed structure creates a …
Compact trench floating field rings termination for 10kV+ rated SiC n-IGBTs
This work presents the design methodology and performance of a compact edge termination
structure aiming 10kV+ rated Silicon Carbide (SiC) devices. Standard Floating Field Rings …
structure aiming 10kV+ rated Silicon Carbide (SiC) devices. Standard Floating Field Rings …
Performance improvement of> 10kV SiC IGBTs with retrograde p-well
A p-well consisting of a retrograde doping profile is investigated for performance
improvement of> 10kV SiC IGBTs. The retrograde p-well, which can be realized using low …
improvement of> 10kV SiC IGBTs. The retrograde p-well, which can be realized using low …
Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications
D Johannesson - 2021 - diva-portal.org
The increased awareness of the on-going climate change accelerates the electric energy
system transformation from fossil-fueled power sources towards systems with larger portions …
system transformation from fossil-fueled power sources towards systems with larger portions …