A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique
features can be expected, such as low-power consumption, wafer-level testing, small …

InGaAsN: Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam
epitaxy using a N 2 radio-frequency plasma source. Photoluminescence reveals an …

An informative new way of plotting magnetization data for transition-metal alloys is
described. The plot is used to distinguish a variety of generic alloy types including: 1) a large …

In this paper we present a successful growth of highly strained GaInAs/GaAs quantum wells
by low-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine. The transition …

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy
(MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant …

We present an overview of our optical characterization work on dilute nitride quantum well
(QW) samples. A simple model for calculating interband transition energies is constructed …

In the past few years, GaInNAsSb has been found to be a potentially superior material to
both GaInNAs and InGaAsP for communications wavelength laser applications. It has been …

In situ x‐ray diffraction studies were performed on the PLSnZT antiferroelectric–ferroelectric
phase switching ceramic and polycrystalline powder. The crystallography of both the …

We report on the lasing characteristics of low-threshold long-wavelength GaInNAs double
quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD) …

We demonstrate here 1.2-μm laser emission from a GaAsP-InGaAs strain compensated
single-quantum-well (SQW) diode. This development enables the fabrication of vertical …