From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Emerging memory devices for neuromorphic computing
A neuromorphic computing system may be able to learn and perform a task on its own by
interacting with its surroundings. Combining such a chip with complementary metal–oxide …
interacting with its surroundings. Combining such a chip with complementary metal–oxide …
A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field
Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …
nanoscale devices because of their ability to integrate into silicon electronics. However, the …
Scale-free ferroelectricity induced by flat phonon bands in HfO2
Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
HfO2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
H Chen, X Zhou, L Tang, Y Chen, H Luo… - Applied Physics …, 2022 - pubs.aip.org
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
Many routes to ferroelectric HfO2: A review of current deposition methods
Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …
researchers are still intensely fascinated by this material system and the promise it holds for …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk… - Journal of Applied …, 2015 - pubs.aip.org
The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …