Gallium-nitride semiconductor technology and its practical design challenges in power electronics applications: An overview
This paper will revise, experimentally investigate, and discuss the main application
challenges related to gallium nitride power semiconductors in switch-mode power …
challenges related to gallium nitride power semiconductors in switch-mode power …
Simulation modelling of III‐Nitride/β‐Ga2O3 Nano‐HEMT for microwave and millimetre wave applications
In this piece of work, a recessed gate field‐plated AlGaN/AlN/GaN HEMT on β‐Ga2O3
substrate is proposed and its performance characteristics are compared with HEMT structure …
substrate is proposed and its performance characteristics are compared with HEMT structure …
A physics-based analytical model for MgZnO/ZnO HEMT
In this paper, a physics-based compact model is developed for novel MgZnO/ZnO high-
electron-mobility transistor (HEMT). Poisson's equation coupled with 1D Schrödinger …
electron-mobility transistor (HEMT). Poisson's equation coupled with 1D Schrödinger …
Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-diamond
We have investigated the self-heating effect on DC and RF performances of identically
fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates. Self …
fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates. Self …
Elimination of the low resistivity of Si substrates in GaN HEMTs by introducing a SiC intermediate and a thick nitride layer
We report the effect of a thick nitride layer on the high-frequency performance of AlGaN/GaN
highelectron-mobility transistors (HEMTs) grown by metal oxide chemical vapor deposition …
highelectron-mobility transistors (HEMTs) grown by metal oxide chemical vapor deposition …
Investigation on the thermal behavior of microwave GaN HEMTs
The investigation of the DC and microwave characteristics versus the ambient temperature
is a key issue for active solid-state devices, since the operating temperature can strongly …
is a key issue for active solid-state devices, since the operating temperature can strongly …
Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric
This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiN
x/AlN/GaN MISHEMTs. The devices featured in situ grown SiN x by metal–organic chemical …
x/AlN/GaN MISHEMTs. The devices featured in situ grown SiN x by metal–organic chemical …
AlGaN/GaN HEMT on 3C-SiC/low-resistivity Si substrate for microwave applications
A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low
resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper …
resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper …
Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
S García, I Íñiguez-de-la-Torre… - Semiconductor …, 2015 - iopscience.iop.org
In this contribution we present the results from the simulation of an AlGaN/GaN
heterostructure diode by means of a Monte Carlo tool where thermal effects have been …
heterostructure diode by means of a Monte Carlo tool where thermal effects have been …
[PDF][PDF] Analysis of AlGaN/GaN high electron mobility transistors with nonalloyed Ohmic contacts achieved by selective area growth using plasma assisted molecular …
L Pang, K Kim - IOSR Journal of Engineering (IOSRJEN), 2014 - academia.edu
We achieved low-resistance nonalloyed Ohmic contacts for n-type GaN using selective area
growth (SAG) by plasma assisted molecular beam epitaxy (PAMBE). Thus-fabricated high …
growth (SAG) by plasma assisted molecular beam epitaxy (PAMBE). Thus-fabricated high …