A review of technologies and design techniques of millimeter-wave power amplifiers
V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …
focusing on broadband design techniques. An overview of the main solid-state technologies …
5G cellular user equipment: From theory to practical hardware design
Research and development on the next generation wireless systems, namely 5G, has
experienced explosive growth in recent years. In the physical layer, the massive multiple …
experienced explosive growth in recent years. In the physical layer, the massive multiple …
A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS
This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …
generation (5G) mobile user equipment integrated phased array transceivers. The output …
2.7 A wideband 28GHz power amplifier supporting 8× 100MHz carrier aggregation for 5G in 40nm CMOS
To meet rising demand, broadband-cellular-data providers are racing to deploy fifth
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
Fully depleted silicon on insulator devices CMOS: The 28-nm node is the perfect technology for analog, RF, mmW, and mixed-signal system-on-chip integration
A Cathelin - IEEE Solid-State Circuits Magazine, 2017 - ieeexplore.ieee.org
The race on the Complementary Metal-Oxide-Semiconductor (CMOS) More Moore
integration scale has brought to light several major limitations for efficient planar process …
integration scale has brought to light several major limitations for efficient planar process …
20.6 A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS
Rapidly growing demand for broadband-cellular-data traffic is driving fifth-generation (5G)
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
Design of a -Band 20-dBm Wideband Power Amplifier Using Transformer-Based Radial Power Combining in 90-nm CMOS
CF Chou, YH Hsiao, YC Wu, YH Lin… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
This paper presents a V-band 1.2-V wideband power amplifier (PA) with a compact four-way
radial power combiner in a 90-nm CMOS process. A transformer-based radial power …
radial power combiner in a 90-nm CMOS process. A transformer-based radial power …
A 65 nm CMOS power amplifier with peak PAE above 18.9% from 57 to 66 GHz using synthesized transformer-based matching network
Maintaining good power performance in a large bandwidth continues to challenge the
design of millimeter-wave (mm-wave) power amplifiers (PAs), including mm-wave PAs with …
design of millimeter-wave (mm-wave) power amplifiers (PAs), including mm-wave PAs with …
A 28GHz self-contained power amplifier for 5G applications in 28nm FD-SOI CMOS
B Moret, V Knopik, E Kerherve - 2017 IEEE 8th Latin American …, 2017 - ieeexplore.ieee.org
This paper presents a 28 GHz CMOS balanced Power Amplifier (PA) with integrated
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …
60-GHz power amplifier in 45-nm SOI-CMOS using stacked transformer-based parallel power combiner
This letter presents the design of a 60-GHz power amplifier (PA) using a new stacked
transformer (STF)-based parallel combiner. It begins by highlighting the main limitation of …
transformer (STF)-based parallel combiner. It begins by highlighting the main limitation of …