Gate-oxide degradation monitoring of SiC MOSFETs based on transfer characteristic with temperature compensation
M Farhadi, BT Vankayalapati… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Gate-oxide degradation is a concern in silicon carbide (SiC) MOSFETs especially in safety-
critical applications such as aerospace and electric vehicles (EVs). To address this concern …
critical applications such as aerospace and electric vehicles (EVs). To address this concern …
Reliability and Condition Monitoring of Sic Power MOSFETs
M Farhadi - 2023 - search.proquest.com
Abstract Silicon Carbide (SiC) power devices have witnessed increasing mainstream
adoption in transportation over the past decade. This is mainly because of the SiC's high …
adoption in transportation over the past decade. This is mainly because of the SiC's high …
Online Gate-oxide Degradation Monitoring of SiC MOSFETs Based on the Turn-on Current Increasing Rate Maximum
Q Huang, W Wei, Z Fan, G Xu - 2024 4th Power System and …, 2024 - ieeexplore.ieee.org
A new SiC MOSFET gate-oxide degradation precursor, the turn-on current increasing rate
maximum, is proposed in this script, and an online monitoring method is developed based …
maximum, is proposed in this script, and an online monitoring method is developed based …