Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant
transport in both phases are carried out for silicon single crystal growth using the floating …

In this paper, we propose a three-dimensional model for a 200 mm floating zone silicon
crystal growth process to investigate the fluid flow and solid–liquid interface. To study the …

Magnetite (Fe3O4) offers unique physical and chemical properties, being an important
material for many industrial applications. Certain limitations on the application conditions …

The concept of a physical model experiment is introduced and discussed in the context of
melt and gas flows in bulk crystal growth processes. Such experiments allow one to" extract" …

Numerical simulations of the transient temperature field and dislocation density distribution
for a recently published silicon crystal heating experiment were carried out. Low-and high …

In single phase flows, benchmarks like the lid driven cavity have become recognized as
fundamental tests for newly developed computational fluid dynamics, CFD, codes. For …

Floating silicon is particularly suitable for the production of power devices and detectors due
to its high purity and high resistivity. However, when the crystal diameter increases to 200 …

The floating zone (FZ) is one of the important methods for pulling silicon single crystals, but
there are still problems of an unstable thermal field and crystallization difficulties. They will …

The large-area seeding concept was applied for Float-zone (FZ) growth of monocrystalline
silicon, without the common Dash-technique for elimination of dislocations. Using large …

In FZ growth processes, the stability of the free surface is important in the production of
single crystal silicon with high quality. To investigate the shape of the free surface in the FZ …