Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
M Kuball, JM Hayes, MJ Uren, I Martin… - IEEE Electron …, 2002 - ieeexplore.ieee.org
We report on the noninvasive measurement of temperature, ie, self-heating effects, in active
AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was …
AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was …
SiC and GaN transistors-is there one winner for microwave power applications?
RJ Trew - Proceedings of the IEEE, 2002 - ieeexplore.ieee.org
Wide bandgap semiconductors show promise for high-power microwave electronic devices.
Primarily due to low breakdown voltage, it has not been possible to design and fabricate …
Primarily due to low breakdown voltage, it has not been possible to design and fabricate …
[HTML][HTML] New applications advisable for gallium nitride
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler… - Materials today, 2002 - Elsevier
GaN-based visible light-emitting diodes and laser diodes are already commercialized for a
variety of lighting and data storage applications. This materials system is also showing …
variety of lighting and data storage applications. This materials system is also showing …
–metal–insulator–semiconductor heterostructure field–effect transistors
X Hu, A Koudymov, G Simin, J Yang, MA Khan… - Applied Physics …, 2001 - pubs.aip.org
We report on a metal–insulator–semiconductor heterostructure field-effect transistor
(MISHFET) using Si 3 N 4 film simultaneously for channel passivation and as a gate …
(MISHFET) using Si 3 N 4 film simultaneously for channel passivation and as a gate …
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
M Kuball, S Rajasingam, A Sarua, MJ Uren… - Applied physics …, 2003 - pubs.aip.org
The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-
effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was …
effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was …
[图书][B] Gallium nitride processing for electronics, sensors and spintronics
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and
integrated magnetic sensors that can be used to create ultra-low power, high speed …
integrated magnetic sensors that can be used to create ultra-low power, high speed …
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
We demonstrated that Sc2O3 thin films deposited by plasma-assisted molecular-beam
epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on …
epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on …
Field-plate engineering for HFETs
This paper reports on the analytical approach for designing field plates for reducing the
electric field in the channel and at the surface of heterostructure field-effect transistors …
electric field in the channel and at the surface of heterostructure field-effect transistors …
Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices
The use of gate insulators for compound semiconductor electronics would alleviate many of
the problems encountered in current Schottky based devices. Further, circuit design can be …
the problems encountered in current Schottky based devices. Further, circuit design can be …
DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors
B Luo, JW Johnson, F Ren, KK Allums… - Applied Physics …, 2001 - pubs.aip.org
AlGaN/GaN high electron mobility transistors (HEMTs) with a range of gate lengths (0.8–1.2
μm) and widths (100–200 μm) were exposed to 40 MeV protons at fluences of 5× 10 9 or 5× …
μm) and widths (100–200 μm) were exposed to 40 MeV protons at fluences of 5× 10 9 or 5× …