Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors
Metal-oxide thin-film transistors (TFT) fabricated by spray pyrolysis are of increasing interest
because of its simple process and scalability. A bottleneck issue is to get a bubble-free and …
because of its simple process and scalability. A bottleneck issue is to get a bubble-free and …
Enhancement of the electrical performance and bias stability of RF-sputtered indium tin zinc oxide thin-film transistors with vertical stoichiometric oxygen control
J Lee, J Jin, S Maeng, G Choi, H Kim… - ACS Applied Electronic …, 2022 - ACS Publications
Indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures are
investigated. The electrical performance and bias stress stability of bilayer-channel ITZO …
investigated. The electrical performance and bias stress stability of bilayer-channel ITZO …
High-performance thin-film transistors of quaternary indium–zinc–tin oxide films grown by atomic layer deposition
A new deposition technique is required to grow the active oxide semiconductor layer for
emerging oxide electronics beyond the conventional sputtering technique. Atomic layer …
emerging oxide electronics beyond the conventional sputtering technique. Atomic layer …
Solution processed In2O3/IGO heterojunction thin film transistors with high carrier concentration
Nowadays, high-quality metal oxide thin film transistors grown by solution process have the
most potential to replace the traditional a-Si TFT as the next generation of transparent …
most potential to replace the traditional a-Si TFT as the next generation of transparent …
High performance of a‐IZTO TFT by purification of the semiconductor oxide precursor
The effect of purification of oxide semiconductor precursor on the performance of amorphous
indium–zinc–tin oxide (a‐IZTO) thin‐film transistors (TFT) using a high‐k zirconium oxide …
indium–zinc–tin oxide (a‐IZTO) thin‐film transistors (TFT) using a high‐k zirconium oxide …
Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment
The effects of gallium doping into indium–zinc–tin oxide (IZTO) thin film transistors (TFTs)
and Ar/O2 plasma treatment on the performance of a‐IZTO TFT are reported. The Ga doping …
and Ar/O2 plasma treatment on the performance of a‐IZTO TFT are reported. The Ga doping …
Praseodymium-doped In-Sn-Zn-O TFTs with effective improvement of negative-bias illumination stress stability
H Zhang, L Liang, X Wang, Z Wu… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this work, amorphous praseodymium-doped In-Sn-Zn-O (ITZO-Pr) thin-film transistors
(TFTs) were fabricated with improved negative-bias illumination stress (NBIS) stability under …
(TFTs) were fabricated with improved negative-bias illumination stress (NBIS) stability under …
Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators
CC Wang, AY Lo, MC Cheng, YS Chang, HC Shih… - Scientific Reports, 2024 - nature.com
Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using
a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor …
a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor …
Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications
Y Li, S Yin, Y Du, H Zhang, J Chen, Z Wang, S Wang… - Nanoscale, 2022 - pubs.rsc.org
Amorphous indium zinc tin oxide (a-IZTO) is a kind of transparent conductive oxide (TCO),
which can be used in transparent electrodes, transistors, and flexible devices. At present, a …
which can be used in transparent electrodes, transistors, and flexible devices. At present, a …
[HTML][HTML] Fully transparent field-effect transistor with high drain current and on-off ratio
We report a fully transparent thin-film transistor utilizing a La-doped BaSnO 3 channel layer
that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5× 10 8. The La-doped …
that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5× 10 8. The La-doped …