The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Although several types of architecture combining memory cells and transistors have been
used to demonstrate artificial synaptic arrays, they usually present limited scalability and …

A detailed understanding of the resistive switching mechanisms that operate in redox-based
resistive random-access memories (ReRAM) is key to controlling these memristive devices …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

To realize highly efficient neuromorphic computing that is comparable to biological
counterparts, bioinspired computing systems, consisting of biorealistic artificial synapses …

In this article, we review the existing analog resistive switching memory (RSM) devices and
their hardware technologies for in-memory learning, as well as their challenges and …

The control and rational design of redox‐based memristive devices, which are highly
attractive candidates for next‐generation nonvolatile memory and logic applications, is …

Resistance random access memory, short RRAM, which employs two or more resistive
states of a material for data storage, has attracted considerable attention as a highly …