Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
A brief review of III-nitride UV emitter technologies and their applications
M Kneissl - III-Nitride Ultraviolet Emitters: Technology and …, 2016 - Springer
This chapter provides a brief introduction to group III-nitride ultraviolet light emitting diode
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …
The road ahead for ultrawide bandgap solar-blind UV photodetectors
A Kalra, UU Muazzam, R Muralidharan… - Journal of Applied …, 2022 - pubs.aip.org
This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters
MA Khan, JP Bermundo, Y Ishikawa, H Ikenoue… - …, 2020 - iopscience.iop.org
Mg-doped p-type semiconducting aluminium-gallium-nitride hole source layer (p-AlGaN
HSL) materials are quite promising as a source of hole'p'carriers for the ultraviolet-B (UVB) …
HSL) materials are quite promising as a source of hole'p'carriers for the ultraviolet-B (UVB) …
Stable and metastable Si negative-U centers in AlGaN and AlN
Electron paramagnetic resonance studies of Si-doped Al x Ga 1− x N (0.79≤ x≤ 1.0) reveal
two Si negative-U (or DX) centers, which can be separately observed for x≥ 0.84. We found …
two Si negative-U (or DX) centers, which can be separately observed for x≥ 0.84. We found …
Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio
Highly conductive silicon-doped AlGaN and ohmic contacts are needed for deep-UV LEDs
and ultrawide bandgap electronics. We demonstrate improved n-Al0. 65Ga0. 35N films …
and ultrawide bandgap electronics. We demonstrate improved n-Al0. 65Ga0. 35N films …
Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy
N-polar AlGaN is an emerging wide-bandgap semiconductor for next-generation high
electron mobility transistors and ultraviolet light emitting diodes and lasers. Here, we …
electron mobility transistors and ultraviolet light emitting diodes and lasers. Here, we …
Dopant species with Al–Si and N–Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane
RB Dos Santos, R Rivelino… - Journal of Physics D …, 2015 - iopscience.iop.org
We have investigated gas-phase reactions driven by silane (SiH 4), which is the dopant
precursor in the metalorganic chemical vapor deposition (MOCVD) of aluminum nitride (AlN) …
precursor in the metalorganic chemical vapor deposition (MOCVD) of aluminum nitride (AlN) …
Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors
Defect behaviors in the degradation of AlGaN-based UV-C light emitting diodes (LEDs)
under constant current stress have been intensively investigated in this work. It is found that …
under constant current stress have been intensively investigated in this work. It is found that …
Electrical properties of (11-22) Si: AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
In this work, the growth and conductivity of semipolar Al x Ga 1− x N: Si with (11-22)
orientation are investigated. Al x Ga 1− x N: Si (x= 0.60±0.03 and x= 0.80±0.02) layers were …
orientation are investigated. Al x Ga 1− x N: Si (x= 0.60±0.03 and x= 0.80±0.02) layers were …