High data rate 5G systems are expected to operate at frequencies between 15GHz and
100GHz, and utilize large numbers of antennas in both base-stations and handsets …

To increase the voltage handling capability of scaled CMOS-based circuits, series
connection (stacking) of transistors has been demonstrated in recently reported mm-wave …

To accommodate growing user demand for faster data rates and extensive connectivity,
modern wireless communication systems must evolve to support a sharply increasing …

This paper has reported a Ka-band (27-40GHz) high efficiency doherty power amplifier
(DPA) MMIC (Monolithic Microwave Integrated Circuit) using GaN-HEMT for 5G application …

This letter presents the design and characterization of a Doherty power amplifier for K-band
applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of …

A two-stage Ka-band Doherty power amplifier (DPA) using a stacked field-effect transistor
(FET) cell is presented. We demonstrate, for the first time, the two critical parameters in a …

In this paper, a Ka/Q dual-band Doherty power amplifier (DPA) with simplified offset lines is
implemented in a 0.1-μm gallium arsenide (GaAs) process. It is found that the dual-band …

This paper presents a three-stage Ka-band Doherty power amplifier fabricated using 0.15
μm GaN-on-SiC HEMT technology. Peak-power greater than 8-watts, 30 dB of small-signal …

A two-stage, high-power symmetric Doherty power amplifier (PA) at 15 GHz is presented.
The PA is implemented in 45 nm CMOS silicon on insulator and achieves more than 23 dB …

Highly efficient power amplifiers (PAs) and associated linearization techniques have been
developed to accommodate the explosive growth in the data transmission rate and …