Current status of modelling the semi-insulating 4H–SiC transient photoconductivity for application to photoconductive switches
M Suproniuk, P Kamiński, R Kozłowski… - Opto-Electronics …, 2017 - Elsevier
In this paper we present the current status of modelling the time evolution of the transient
conductivity of photoexcited semi-insulating (SI) 4H–SiC taking into account the properties of …
conductivity of photoexcited semi-insulating (SI) 4H–SiC taking into account the properties of …
Nanoscale mapping of local intrinsic strain-induced anomalous bandgap variations in WSe2 using selective-wavelength scanning photoconductivity microscopy
Nanoscale defects can locally tailor the optoelectronic properties of two-dimensional
materials such as bandgap. However, it is still challenging to directly map and analyze the …
materials such as bandgap. However, it is still challenging to directly map and analyze the …
Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
Y Turkulets, I Shalish - Journal of Applied Physics, 2018 - pubs.aip.org
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors
under high electric fields. While Franz [Z. Naturforsch. A 13, 484 (1958)] and Keldysh [Sov …
under high electric fields. While Franz [Z. Naturforsch. A 13, 484 (1958)] and Keldysh [Sov …
[图书][B] Measurement of Local Electric Fields and the Onset of Breakdown in Ultra-wide Band Gap Semiconductor Devices using Photocurrent Spectroscopy
D Verma - 2023 - search.proquest.com
Abstract Ultra-wide-bandgap (UWBG) materials-based power electronic devices suffer from
unexpected and uncertain locations of non-uniformity, and high fields degrade these …
unexpected and uncertain locations of non-uniformity, and high fields degrade these …
Contactless method to measure 2DEG charge density and band structure in HEMT structures
Y Turkulets, I Shalish - IEEE Journal of the Electron Devices …, 2018 - ieeexplore.ieee.org
We present a contactless method capable of characterizing a high electron mobility
transistor (HEMT) heterostructure at the wafer stage, right after its growth, before any …
transistor (HEMT) heterostructure at the wafer stage, right after its growth, before any …
[HTML][HTML] Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy
The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the
spectral variation of photocurrent responsivity data that redshift and broaden with increasing …
spectral variation of photocurrent responsivity data that redshift and broaden with increasing …
Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures
Y Turkulets, I Shalish - Journal of Applied Physics, 2018 - pubs.aip.org
Modern bandgap engineered electronic devices are typically made of multi-semiconductor
multi-layer heterostructures that pose a major challenge to silicon-era characterization …
multi-layer heterostructures that pose a major challenge to silicon-era characterization …
Ultranarrow Band UV Detection in GaN with Simple Device Architecture
An ultranarrow‐band ultraviolet (UV) GaN detector with a simple device architecture is
presented. The device displays an ultranarrow band response centred at 366 nm with only≈ …
presented. The device displays an ultranarrow band response centred at 366 nm with only≈ …
[PDF][PDF] Contactless method to measure 2DEG charge density and band structure in high electron mobility transistor structures does not require transistor fabrication
Y Turkulets, I Shalish - arXiv preprint arXiv:1801.04974, 2018 - scholar.archive.org
We present a contactless method that is capable of characterizing a high electron mobility
transistor heterostructure at the wafer stage, right after its growth, before any production …
transistor heterostructure at the wafer stage, right after its growth, before any production …
[PDF][PDF] Probing band structure in complex semiconductor heterostructures
Y Turkulets, I Shalish - arXiv preprint arXiv:1710.06162, 2017 - arxiv.org
Modern bandgap engineered electronic devices are typically made of multi-semiconductor
multi-layer heterostructures that pose a major challenge to silicon-era characterization …
multi-layer heterostructures that pose a major challenge to silicon-era characterization …