Mössbauer studies of two-electron centers with negative correlation energy in crystalline and amorphous semiconductors
GA Bordovsky, SA Nemov, AV Marchenko, PP Seregin - Semiconductors, 2012 - Springer
The results of the study of donor U−-centers of tin and germanium in lead chalcogenides by
Mössbauer emission spectroscopy are discussed. The published data regarding the …
Mössbauer emission spectroscopy are discussed. The published data regarding the …
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses
AV Marchenko, PP Seregin, EI Terukov… - Semiconductors, 2019 - Springer
The formation of antisite defects in Ge 20 Te 80 and Ge 15 As 4 Te 81 vitreous alloys in the
form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by …
form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by …
Electronic transport in amorphous phase-change materials
JM Luckas - 2012 - osti.gov
Phase change materials combine a pronounced contrast in resistivity and reflectivity
between their disordered amorphous and ordered crystalline state with very fast …
between their disordered amorphous and ordered crystalline state with very fast …
Study of platinum impurity atom state in vitreous arsenic selenide
GA Bordovsky, AV Marchenko, TY Rabchanova… - Semiconductors, 2012 - Springer
Platinum atoms in the structure of As 2 Se 3 glass are stabilized in the form of Pt 2+ and Pt
4+ ions and correspond to ionized states of the amphoteric two-electron center with negative …
4+ ions and correspond to ionized states of the amphoteric two-electron center with negative …
Transport électronique dans les matériaux à changement de phase amorphe
J Luckas - 2012 - theses.hal.science
Phase change materials combine a pronounced contrast in resistivity and reflectivity
between their disordered amorphous and ordered crystalline state with very fast …
between their disordered amorphous and ordered crystalline state with very fast …