High dielectric constant (κ) materials have become a necessity for down scaling of metal-
oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as …

We developed a simple and environmentally friendly spin-coating method for high-κ
dielectrics (AlOx, ZrOx, YOx and TiOx). These materials were used as gate dielectrics for …

Controlling oxygen content in perovskite oxides with ABO3 structure is one of most critical
steps for tuning their functionality. Notably, there have been tremendous efforts to …

Ga 2 O 3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by
plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma …

We studied the structural and electrical properties of TiO 2 thin films grown by thermal
oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass …

The impact of annealing on the dielectric performance of TiO 2 thin films synthesized by
PECVD was investigated. Films annealed between 500 and 700 C have an anatase crystal …

Chemical vapor deposition (CVD) is one of the most common techniques to grow large-area
hexagonal boron nitride (h-BN). However, the substrate on which the h-BN is grown plays …

An efficient way to generate nanoscale laser-induced periodic surface structures (LIPSS) in
rutile-type TiO 2 with frequency-converted femtosecond laser pulses at wavelengths around …

By virtue of the biocompatibility, environmental benignity, and sustainability, as well as low
cost of keratin protein's source herein, we report its application as a gate dielectric material …

Titanium dioxide (TiO2) films have been deposited on glass and p-silicon (100) substrates
by DC magnetron sputtering technique to investigate their structural, electrical and optical …