An embodiment is a semiconductor device which includes a first oxide semiconductor layer
over a substrate having an insulating surface and including a crystalline region formed by …

7.061, 014 B2 6/2006 Hosonoet al. 2007, 0108446 A1 5, 2007 Akimoto 7,064.346 B2 62006
Kawasaki et al. 2007. O152217 A1 7, 2007 Lai et al. 7,105,868 B2 92006 Nause et al …

An embodiment is a semiconductor device which includes a first oxide semiconductor layer
over a substrate having an insulating surface and including a crystalline region formed by …

67,752 B1 4/2004 Kawasaki et al. 2008. O166834 A1 7/2008 Kim et al. 7,049,190 B2 5,
2006 Takeda et al. 2008. O182358 A1 7/2008 Cowdery-Corvan et al. 7061, 014 B2 6, 2006 …

An embodiment is a semiconductor device which includes a first oxide semiconductor layer
over a substrate having an insulating surface and including a crystalline region formed by …

To provide a highly reliable semiconductor device. The semi conductor device includes a
first oxide layer over an insulat ing film; an oxide semiconductor layer over the first oxide …

It is also known that heat resistance of the oxide semicon ductor is insufficient, and oxygen,
Zinc, and the like are sepa rated by heat treatment in a TFT manufacturing process, and a …

(57) ABSTRACT A semiconductor device includes an oxide layer, a source electrode layer
in contact with the oxide layer, a first drain electrode layer in contact with the oxide layer, a …

A semiconductor device having excellent electric characteristics and a method for
manufacturing the semiconductor device are provided. A method for manufacturing a …

(57) ABSTRACT This semiconductor device (100) includes: a gate electrode (12) formed on
a substrate (10); a gate insulating layer (20) formed over the gate electrode; an oxide …