Practically all III‐nitride light emitting diodes (LEDs) suffer from the efficiency rollover that
occurs at high electric currents in the devices and limits their performance. At the moment …

This paper presents a 3D comprehensive thermal-electrical self-consistent model of the
continuous-wave (CW) operation of one-dimensional arrays of III-N-based laser diodes at …

Continuous-wave (CW) performance of modern 1.3-μm InAsP/InGaAsP multi-quantum-well
(MQW) tunnel-junction vertical-cavity surface-emitting diode lasers (TJ-VCSELs) is …

The novel fabrication scheme of the mid-infrared (∼ 9.5 μm) Al 0.45 Ga 0.55 As/GaAs
plasmon-enhanced-waveguide quantum cascade laser (QCL) is reported. The electric …

This paper presents the results of a thermal computational analysis of a two-dimensional
laser array emitting from a surface. The array consisted of eight equispaced ridge …

This paper explores the effect on optical output power of modifications to the package
assembly of a blue–violet III-N-based p-down edge-emitting ridge-waveguide laser diode …

The effect of modifications in epi-side (top) gold metallization on a thermal performance and
on power roll-over of blue-vio-let III-N-based p-up edge-emitting ridge-waveguide laser …

Abstract Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm
oxide-confined In (Ga) As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode …

Abstract Room-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-
waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN …

Ion implantation for the electrical isolation of semiconductor lasers is a commonly applied
technique for multi-quantum well (MQW) lasers, as well as for the deep electrical isolation for …