Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Self-induced photoionization of traps in buffer-free AlGaN/GaN HEMTs
F De Pieri, M Fornasier, VG Zhan… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Detrapping mechanisms and their dependence on applied bias have been studied in buffer-
free AlGaN/GaN HEMTs on SiC. It is shown that the detrapping time constant decreases by …
free AlGaN/GaN HEMTs on SiC. It is shown that the detrapping time constant decreases by …
[HTML][HTML] The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different
thicknesses of unintentional doping GaN (UID-GaN) channels were compared and …
thicknesses of unintentional doping GaN (UID-GaN) channels were compared and …
Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs
We discuss a physical mechanism in the AlGaN/GaN high electron mobility transistors
(HEMTs) that partial electrons from reverse gate leakage () inject into the HEMT buffer and …
(HEMTs) that partial electrons from reverse gate leakage () inject into the HEMT buffer and …
[HTML][HTML] Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power …
For operation as power amplifiers in RF applications, high electron mobility transistor
(HEMT) structures are subjected to a range of bias conditions, applied at both the gate and …
(HEMT) structures are subjected to a range of bias conditions, applied at both the gate and …
DC Reliability Study of GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers
BJ O'Sullivan, A Alian… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
We report on charge capture and emission in Metal-Oxide-Semiconductor AlGaN/AlN/GaN
High-Electron Mobility Transistors (MOS-HEMT) foreseen as power amplifiers in mm-wave …
High-Electron Mobility Transistors (MOS-HEMT) foreseen as power amplifiers in mm-wave …
A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs
Thin channel GaN HEMTs intended for mm-wave operation suffer from increased on-
resistance (R ON) dispersion, limiting their large-signal performance. This work establishes …
resistance (R ON) dispersion, limiting their large-signal performance. This work establishes …
[PDF][PDF] GaN-on-Si Technology for Modern Wireless Communication Systems: Optimisation Insight Using RF Characterisation
SPDIP Wambacq, IB Parvais, IW Meulebroeck… - researchportal.vub.be
De stijgende complexiteit van onze moderne communicatiesystemen heeft een optimalisatie
te weeg gebracht voor elke specifieke functie op zich, en dit voor elke technologie …
te weeg gebracht voor elke specifieke functie op zich, en dit voor elke technologie …