The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …

Based on the recent achievements in vapor–liquid–solid (VLS) synthesis, characterization
and modeling of ternary III–V nanowires and axial heterostructures within such nanowires …

The growth of III–III–V axial heterostructures in nanowires via the vapor–liquid–solid method
is deemed to be unfavorable because of the high solubility of group III elements in the …

Controlling the composition of ternary III-V semiconductor nanowires is of high technological
importance and the current theoretical understanding is so far limited. We derive a model for …

We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire
heterostructures by metal–organic chemical vapor deposition. The structure consists of a …

With a band gap value of 1.7 eV, Al 0.2 Ga 0.8 As is one of the ideal III–V alloys for the
development of nanowire-based Tandem Solar Cells on silicon. Nevertheless, growing self …

We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)
B GaAs substrates by metal organic chemical vapor deposition via vapor–liquid–solid …

A composite nanostructure for high-efficiency solar cells that axially connects nanowire core-
shell pn junctions is proposed. By axially connecting the pn junctions in one nanowire, the …

We present here the growth of GaAs, InAs and InGaAs nanowires by molecular beam
epitaxy. The nanowires have been grown on different substrates [GaAs (001), GaAs (111) …

InGaAs/GaAs core-shell nanowires have been grown by molecular beam epitaxy. The core-
shell nanowires show room temperature photoluminescence. At low temperatures their …