Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-
effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal …

An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that
comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of …

Embodiments are directed to a method of forming a lami nated magnetic inductor and
resulting structures having multiple magnetic layer thicknesses. A first magnetic stack having …

Embodiments are directed to a method of forming a mag netic stack arrangement of a
laminated magnetic inductor having a high frequency peak quality factor (Q). A first magnetic …

ABSTRACT A method for fabricating a magnetic material stack on a substrate includes the
following steps. A first dielectric layer is formed. A first magnetic material layer is formed on …

Embodiments are directed to a method of forming a lami nated magnetic inductor and
resulting structures having multiple magnetic layer thicknesses. A first magnetic stack having …

Embodiments are directed to a method of forming a lami nated magnetic inductor and
resulting structures having anisotropic magnetic layers. A first magnetic stack is formed …

A method of magnetic forming an integrated fluxgate sensor includes providing a patterned
magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a …

Embodiments of the invention are directed to a method of fabricating a yoke arrangement of
an inductor. A non-limiting example method includes forming a dielectric layer across from a …

(Continued) Primary Examiner—Minh N Tang (74) Attorney, Agent, or Firm—Tuenlap D.
Chan; Charles A. Brill; Frank D. Cimino (57) ABSTRACT A fluxgate device that includes a …