Improved resistive switching characteristics observed in amorphous boron nitride-based RRAM device via oxygen doping: A study based on bulk and interface traps …
In this paper, we propose an oxygen-doped amorphous boron nitride (O-doped a-BN)-
based resistive random-access memory (RRAM) to address the low on/off ratio and stability …
based resistive random-access memory (RRAM) to address the low on/off ratio and stability …
Effect of Hydrogen Annealing on Performances of BN-Based RRAM
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate
for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity …
for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity …
Enhanced resistive switching performance in TiN/AlOx/Pt RRAM by high-temperature IV cycling
T He, H Yan, Y Wang - Solid-State Electronics, 2024 - Elsevier
Set voltage is a key parameter for the application of Resistance Random Access Memory
(RRAM). In this paper, based on TiN/AlO x/Pt RRAM synthesized by the magnetron …
(RRAM). In this paper, based on TiN/AlO x/Pt RRAM synthesized by the magnetron …
Optimization of Ferroelectric Properties of HfO2-based Thin Films by Ion Irradiation
N Liao, X Lin, B Zhu, X Zhong, L Jiang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In order to explore ion irradiation optimization schemes for HfO2-based ferroelectric films,
this article combines the Monte Carlo (MC) method with the phase-field method to establish …
this article combines the Monte Carlo (MC) method with the phase-field method to establish …
Influence of en-APTAS membrane on NO gas selectivity of HfO2-based memristor gas sensors
Memristor-based gas sensors (gas sensor+ memristor, gasistor) have gained popularity due
to their high response characteristics and ability to operate at RT. In this paper, N-[3 …
to their high response characteristics and ability to operate at RT. In this paper, N-[3 …