Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work
function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S …

Germanium possesses higher electron and hole mobilities than silicon. There is a big leap,
however, between these basic material parameters and implementation for high …

A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

At any metal/germanium (Ge) interfaces, Schottky junctions to n-Ge and ohmic ones to p-Ge
are formed by the strong Fermi level pinning to the valence band edge of Ge. In this paper …

This paper reviews progress and current critical issues with respect to the integration of
germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel …

Due to the strong Fermi-level pinning close to the germanium (Ge) valence band edge, all
metal/p-type Ge contacts show Ohmic characteristics, while metal/n-type Ge contacts exhibit …

Being the pioneer material in the history of electronics, germanium has regained a lot of
interest as a semiconductor material for opto-electronic and electronic applications. We …

Ge is a very promising material as future channel materials for nanoscale MOSFETs due to
its high mobility and thus a higher source injection velocity, which translates into higher drive …