Electrical manipulation of magnetization without an external magnetic field is critical for the
development of advanced non-volatile magnetic-memory technology that can achieve high …

We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …

This article is written on behalf of many colleagues, collaborators, and researchers in the
field of advanced materials who continue to enable and undertake cutting-edge research in …

Deep Learning neural networks are pervasive, but traditional computer architectures are
reaching the limits of being able to efficiently execute them for the large workloads of today …

Energy efficient computing hardware has played an instrumental role in enabling novel
abundant data applications and transformative new user experiences. As we look forward …

SAS-MRAM has been proposed as a potential last-level cache SRAM replacement owing to
its high speed (~ 1 ns), high cell density, and high endurance characteristics. Here, we …

To make spin–orbit torque magnetic random-access memories (SOT-MRAMs) become
competitive enough to replace the contemporary memory architecture, it is of great …

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit
torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 …

Electric manipulation of magnetic moments is the key technology for incorporating magnetic
functionalities into integrated circuits. Spin-orbit torque (SOT) arises from the spin-orbit …