The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

Here we clarify the central role of the miscut during group III-V/group IV crystal growth. We
show that the miscut impacts the initial antiphase domain distribution, with two distinct …

Hybrid materials taking advantage of the different physical properties of materials are highly
attractive for numerous applications in today's science and technology. Here, it is …

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …

This work shows that a large‐scale textured GaP template monolithically integrated on Si
can be developed by using surface energy engineering, for water‐splitting applications. The …

In this work, we investigate correlations between optical and electro-optical properties of
GaAsPN/GaP p–i–n solar cells grown by MBE on GaP (001) substrates. A …

This study examines the growth condition to obtain a single-phase Cu (In, Ga) S 2 (CIGS)
chalcopyrite film epitaxially grown by coevaporation on a GaP/Si (001) pseudo-substrate. In …

We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It
combines sequences of ex situ and in situ treatments. The ex situ process is composed of …

Potentialities of density functional theory (DFT) based methodologies are explored for
photovoltaic materials through the modeling of the structural and optoelectronic properties of …

Hydrogen produced using artificial photosynthesis, ie solar splitting of water, is a promising
energy alternative to fossil fuels. Efficient solar water splitting demands a suitable band gap …