Solution-derived textured oxide thin films—a review
MS Bhuiyan, M Paranthaman… - … Science and technology, 2006 - iopscience.iop.org
Thin film growth by a non-vacuum deposition technique, namely, the chemical solution
deposition (CSD) method, is reviewed with emphasis on the growth of various oxide films …
deposition (CSD) method, is reviewed with emphasis on the growth of various oxide films …
Ferroelectric and dielectric properties of strontium titanate doped with barium
Ferroelectric samples Sr1− xBaxTiO3 (BST), where x= 0, 0.2, 0.4, 0.6, 0.8 and 1, were
prepared using the tartrate precursor method and annealed at 1200° C for 2 h. X-ray …
prepared using the tartrate precursor method and annealed at 1200° C for 2 h. X-ray …
Low Leakage in High‐k Perovskite Gate Oxide SrHfO3
Reducing the leakage current through the gate oxide is becoming increasingly important for
power consumption reduction as well as reliability in integrated circuits as the …
power consumption reduction as well as reliability in integrated circuits as the …
Bismuth vanadate synthesis by metallo-organic decomposition: thermal decomposition study and particle size control
A Galembeck, OL Alves - Journal of materials science, 2002 - Springer
Polycrystalline bismuth vanadate, BiVO 4, was synthesized by metallo-organic
decomposition (MOD), starting from bismuth 2-ethyl-hexanoate and vanadium (IV) oxy …
decomposition (MOD), starting from bismuth 2-ethyl-hexanoate and vanadium (IV) oxy …
Characteristics of oriented LaNiO3 thin films fabricated by the sol–gel method
S Miyake, S Fujihara, T Kimura - Journal of the European Ceramic Society, 2001 - Elsevier
We fabricated LaNiO3 (LNO) thin films on SiO2 glass,(100) SrTiO3 (STO),(100) Si and CeO2-
covered (100) Si substrates by the sol–gel method. The deposited films were heat-treated at …
covered (100) Si substrates by the sol–gel method. The deposited films were heat-treated at …
Effect of LaNiO3 interlayer on dielectric properties of (Ba0. 5Sr0. 5) TiO3 thin films deposited on differently oriented Pt electrodes
KH Yoon, JH Sohn, BD Lee, DH Kang - Applied physics letters, 2002 - pubs.aip.org
The (Ba0. 5Sr0. 5) TiO3 (BST) thin films were deposited on the LaNiO3/Pt (111)/Ti/SiO2/Si
LNO/Pt (111) and LaNiO3/Pt (200)/SiO2/Si LNO/Pt (200) substrates by metalorganic …
LNO/Pt (111) and LaNiO3/Pt (200)/SiO2/Si LNO/Pt (200) substrates by metalorganic …
[HTML][HTML] Decomposição de precursores metalorgânicos: uma técnica química de obtenção de filmes finos
This review focus the more relevant foundations and applications of the Metallo-Organic
Decomposition (MOD) technique, mainly within the last decade. The technique has grown …
Decomposition (MOD) technique, mainly within the last decade. The technique has grown …
Optical characteristics of LaNiO3 thin films in the terahertz–infrared frequency range
VS Nozdrin, GA Komandin, IE Spektor… - Journal of Applied …, 2022 - pubs.aip.org
Transparent semiconducting oxides are widely used as conductive electrodes in
optoelectronic devices in the near-infrared and visible ranges. However, their applications in …
optoelectronic devices in the near-infrared and visible ranges. However, their applications in …
Preparation of (Ba0. 5Sr0. 5) TiO3 thin films by sol–gel method with rapid thermal annealing
(Ba0. 5Sr0. 5) TiO3 (BST) thin films were deposited on Si and plantinized Si substrates using
sol–gel method with rapid thermal annealing (RTA). The films were characterized by …
sol–gel method with rapid thermal annealing (RTA). The films were characterized by …
(Pb, La)(Zr, Sn, Ti) O3 antiferroelectric thin films grown on LaNiO3-buffered and Pt-buffered silicon substrates by sol-gel processing
X Li, J Zhai, H Chen - Journal of applied physics, 2005 - pubs.aip.org
Antiferroelectric (Pb, La)(Zr, Sn, Ti) O 3 thin films have been fabricated on La Ni O 3∕ Pt∕
Ti∕ Si O 2∕ Si and Pt∕ Ti∕ Si O 2∕ Si substrates by a sol-gel processing technique. The …
Ti∕ Si O 2∕ Si and Pt∕ Ti∕ Si O 2∕ Si substrates by a sol-gel processing technique. The …