Evaluation of ultrahigh-voltage 4H-SiC gate turn-off thyristors and insulated-gate bipolar transistors for high-power applications
D Johannesson, M Nawaz, S Norrga… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Technology-based computer-aided design models have been used to predict the static and
dynamic performance of ultrahigh-voltage (UHV) 4H-silicon carbide (SiC) PiN diodes …
dynamic performance of ultrahigh-voltage (UHV) 4H-silicon carbide (SiC) PiN diodes …
Dynamic avalanche limit and current filamentation onset limit in 4H-silicon carbide high-voltage diodes
D Johannesson, M Nawaz… - IEEE Journal of Emerging …, 2021 - ieeexplore.ieee.org
Dynamic avalanche (DA) phenomena and current filament (CF) formation are two extreme
conditions observed in high-power devices, setting the maximum limit on turn-on/off current …
conditions observed in high-power devices, setting the maximum limit on turn-on/off current …
12.5 kV SiC gate turn off thyristor with trench-modulated JTE structure
T Yang, X Li, Y Wang, P Yao… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, an ultrahigh voltage silicon carbide (SiC) gate turn off (GTO) Thyristor with a
novel trench-modulated two-zone junction termination extension (TM-TZ-JTE) is investigated …
novel trench-modulated two-zone junction termination extension (TM-TZ-JTE) is investigated …
A High-Resolution In Situ Condition Monitoring Circuit for SiC Gate Turn-Off Thyristor in Grid Applications
Y Liu, L Liu, S Yin, Y Gu, S Deng, Z Xing… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
Silicon carbide (SiC) gate turn-off (GTO) thyristor is attractive for grid applications due to the
excellent performances of high blocking voltage and low ON-resistance. However, the short …
excellent performances of high blocking voltage and low ON-resistance. However, the short …
SiC GTOs thyristor for long term reliability on pulsed power application test
Silicon Carbide (SiC) is a wide-bandgap semiconductor with a wider bandgap, higher
critical electric field, higher saturation velocity, and higher thermal conductivity than silicon …
critical electric field, higher saturation velocity, and higher thermal conductivity than silicon …
Design and Optimization of N-Type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage
H Ma, Y Wang - 2021 International Conference on IC Design …, 2021 - ieeexplore.ieee.org
A N-type silicon carbide (SiC) gate turn-off thyristor (GTO) is designed and simulated with
Sentaurus TCAD software, the detailed optimization process and final parameters are …
Sentaurus TCAD software, the detailed optimization process and final parameters are …
The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor
A 15kV SiC thyristor is analysed, considering for the first time the design properties that will
ensure the safe, stable operation of the device as an integrated gate commutated thyristor …
ensure the safe, stable operation of the device as an integrated gate commutated thyristor …
Design, Control, and Test of Emerging Grid-connected Converters Considering Grid Requirements
H Li - 2022 - trace.tennessee.edu
Power electronics plays a significant and non-substitutable role in the power system's
ongoing revolution from the traditional centralized model to a decentralized system …
ongoing revolution from the traditional centralized model to a decentralized system …