The effects of temperature and pressure on the optical properties of a donor impurity in (In, Ga) N/GaN multilayer cylindrical quantum dots
This paper examines the variation of the linear, third-order nonlinear and total intersubband
optical absorption (refractive index changes) coefficients of a donor impurity in multilayer …
optical absorption (refractive index changes) coefficients of a donor impurity in multilayer …
Gallium oxynitride@ carbon cloth with impressive electrochemical performance for supercapacitors
J Wang, F Zhang, Z Xu, W Hu, H Jiang, L Liu… - Chemical Engineering …, 2021 - Elsevier
Gallium oxynitride (GON) is emerging as an efficient component in the field of energy
storage and conversion. However, the structure has not been well understood that is …
storage and conversion. However, the structure has not been well understood that is …
Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells
We report on the growth of n-GaN/p-Si heterojunction solar cells via thermal chemical vapor
deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …
deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …
Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells
We report on the optimized growth of catalyst-free GaN nanowires (NWs)/p-Si by the vapor–
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
Insight into defect-engineered gallium oxynitride nanoparticle-based electrodes with improved electrochemical performance for supercapacitors
J Wang, X Wu, X Lu, Z Xu, H Jiang, L Liu, Q Ban… - Electrochimica Acta, 2022 - Elsevier
Gallium oxynitride (GON) with phase resembling that of wurtzite gallium nitride (GaN) is a
promising electrode material for supercapacitors. However, pristine GON nanoparticles …
promising electrode material for supercapacitors. However, pristine GON nanoparticles …
Localized Phonon Transport Study of GaN/SiO2 Core/shell Nanowires under Thermal-Stress Coupling
J Chen, B Hu, Z Wang - Langmuir, 2024 - ACS Publications
In order to comprehensively explore the intricate mechanisms of thermo-mechanical
interactions, this study employs the molecular dynamics method to investigate the influence …
interactions, this study employs the molecular dynamics method to investigate the influence …
Tailoring thermal transport and confinement effect of GaN/Si3N4 nanowires utilizing core–shell architecture
Y Yang, K Yuan, Z Wang - Journal of Physics: Condensed Matter, 2024 - iopscience.iop.org
The thermal transport properties of nanowires (NWs) can be significantly influenced by the
implementation of a core–shell structure, which introduces interface scattering and phonon …
implementation of a core–shell structure, which introduces interface scattering and phonon …
Comparison of optoelectronic properties of epitaxial and non-epitaxial GaN nanostructures
Structural, optical and surface properties of epitaxially grown 2D GaN nanowall network
using Molecular Beam Epitaxy have been compared to those of non-epitaxially grown single …
using Molecular Beam Epitaxy have been compared to those of non-epitaxially grown single …