Substantial Improvement of the Short-circuit Capability of a 1.2 kV SiC MOSFET by a HfO2/SiO2 Ferroelectric Gate Stack
State-of-the-art Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors
(MOSFETs) are required to meet strict constraints on short-circuit capability, that are …
(MOSFETs) are required to meet strict constraints on short-circuit capability, that are …
具有沟槽氧化物和P- 屏蔽层的4H-SiC MPS 的设计与仿真.
蔡艺， 汪再兴， 姜佳池， 王林昌… - Electronic Components & …, 2024 - search.ebscohost.com
利用TCAD 仿真研究了一种具有沟槽氧化物和P-屏蔽层结构的新型4H-SiC TP-MPS 二极管.
通过在传统MPS 中引入沟槽氧化物和P- 屏蔽层, 能够有效地抑制器件的迅回效应和改善其反向 …
通过在传统MPS 中引入沟槽氧化物和P- 屏蔽层, 能够有效地抑制器件的迅回效应和改善其反向 …
基于逐级匹配技术的复合多层吸波材料优化设计.
李冠亚， 何清婷 - Electronic Components & Materials, 2023 - search.ebscohost.com
复合多层吸波材料除具备“薄, 轻, 宽, 强” 等要求外, 快速有效的设计方法可大大缩短其研发应用
时间周期, 利于技术迭代升级. 本文基于传输线理论和逐级匹配技术, 控制复合多层吸波材料界面 …
时间周期, 利于技术迭代升级. 本文基于传输线理论和逐级匹配技术, 控制复合多层吸波材料界面 …
4H-SiC SP-MPS 二极管迅回效应的仿真研究.
姜佳池， 汪再兴， 保玉璠， 彭华溢… - … Components & Materials, 2023 - search.ebscohost.com
为了抑制4H-SiC MPS 二极管的迅回效应, 在传统结构的肖特基结下方引入P-轻掺杂区形成SP-
MPS 结构. 给出简化电阻模型和等效电路图分析MPS 二极管的正向导通特性 …
MPS 结构. 给出简化电阻模型和等效电路图分析MPS 二极管的正向导通特性 …
A Simple Electrothermal Compact Model for SiC MPS Diodes Including the Snapback Mechanism
V d'Alessandro, V Terracciano… - … Investigations of ICs …, 2023 - ieeexplore.ieee.org
In this paper, a simple electrothermal compact model for the static behavior of SiC MPS
diodes is developed in the form of a SPICE-compatible subcircuit. The model is suited to …
diodes is developed in the form of a SPICE-compatible subcircuit. The model is suited to …
Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack
In this paper, TCAD simulations provide insights on the effect of a non-linear dielectric gate
stack on the short-circuit performance of silicon carbide (SiC) power MOSFETs. In particular …
stack on the short-circuit performance of silicon carbide (SiC) power MOSFETs. In particular …
Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
In this paper, the effect of a non-linear dielectric gate stack on the short-circuit performance
of a 1.2 kV SiC MOSFET was analyzed through TCAD simulations. Starting from the TCAD …
of a 1.2 kV SiC MOSFET was analyzed through TCAD simulations. Starting from the TCAD …
A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
V Terracciano, A Borghese, M Boccarossa… - Solid State …, 2024 - Trans Tech Publ
In this paper, a simple compact model for the static behavior of SiC MPS diodes is
developed in the form of a SPICE-compatible subcircuit. The model is suited to describe the …
developed in the form of a SPICE-compatible subcircuit. The model is suited to describe the …
Performance Optimisation of 4H-SiC Semi-Superjunction MPS Diodes
B Wang, Z Wang, J Jiang, Y Cai… - 2024 6th International …, 2024 - ieeexplore.ieee.org
To optimize the electrical performance of 4H-SiC MPS (Merged PiN Schottky) diodes, this
paper proposes a semi-superjunction structure MPS diode (SemiSJ-MPS diode). Compared …
paper proposes a semi-superjunction structure MPS diode (SemiSJ-MPS diode). Compared …
Performance Optimization of 4H-SiC MBL MPS Diode
B Liu, Z Wang, J Jiang, L Wang… - 2024 6th International …, 2024 - ieeexplore.ieee.org
In this paper, a new Merged PIN Schottky (MPS) diode concept realizing low reverse time,
low specific on-resistance and good trade-off between dynamic and static characteristics is …
low specific on-resistance and good trade-off between dynamic and static characteristics is …