Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table

P Hess - Nanoscale Horizons, 2021 - pubs.rsc.org
This tutorial review describes the ongoing effort to convert main-group elements of the
periodic table and their combinations into stable 2D materials, which is sometimes called …

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent …

D Kecik, A Onen, M Konuk, E Gürbüz, F Ersan… - Applied Physics …, 2018 - pubs.aip.org
Potential applications of bulk GaN and AlN crystals have made possible single and
multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005 …

Electrical properties and current-illumination characteristics of the SiC/GaN lateral heterostructure

E Li, K Qin, Z Cui, Y Shen, D Ma, P Yuan… - The Journal of …, 2024 - ACS Publications
The construction of lateral heterostructures (LHSs) has the potential to adjust the electrical
properties and current-illumination characteristics through interfacial interactions, providing …

Improved Polarization in the Sr6Cd2Sb6O7Se10 Oxyselenide through Design of Lateral Sublattices for Efficient Photoelectric Conversion

R Wang, F Wang, X Zhang, X Feng… - Angewandte Chemie …, 2022 - Wiley Online Library
Highly‐polarizable materials are favorable for photoelectric conversion due to their efficient
charge separation, while precise design of them is still a big challenge. Herein a novel polar …

Electronic and optical properties of boron phosphide/blue phosphorus heterostructures

Y Mogulkoc, M Modarresi, A Mogulkoc… - Physical Chemistry …, 2018 - pubs.rsc.org
The van der Waals (vdW) heterostructures are emerging as promising structures for future
possible optoelectronic devices. Motivated by the recent studies on vdW heterostructures …

Chemical and substitutional doping, and anti-site and vacancy formation in monolayer AlN and GaN

Y Kadioglu, F Ersan, D Kecik, OÜ Aktürk… - Physical Chemistry …, 2018 - pubs.rsc.org
We investigated the effects of chemical/substitutional doping, hydrogenation, and anti-site
and vacancy defects on the atomic, optoelectronic and magnetic properties of AlN and GaN …

Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1–x Al x N …

D Wines, F Ersan, C Ataca - ACS Applied Materials & Interfaces, 2020 - ACS Publications
Recently, two-dimensional (2D) group-III nitride semiconductors such as h-BN, h-AlN, h-
GaN, and h-InN have attracted attention because of their exceptional electronic, optical, and …

[HTML][HTML] Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering

Y Cai, Y Liu, Y Xie, Y Zou, C Gao, Y Zhao, S Liu, H Xu… - APL Materials, 2020 - pubs.aip.org
Wide bandgap two-dimensional semiconductors are of paramount importance for
developing van der Waals heterostructure electronics. This work reports the use of layer and …

Optoelectronic properties of the two-dimensional h-BN/h-AlN superlattice by first-principles calculation

W Xu, Q He, Z Zhang, H Wang, J Huang, S Luo… - Computational Materials …, 2023 - Elsevier
Heterodimensional superlattices have been demonstrated to be promising candidates for
engineering materials with extraordinary properties. We systematically investigate the …

Lateral Composite Structures of Graphene/Graphane/Graphone: Electronic Confinement, Heterostructures with Tunable Band Alignment, and Magnetic State

S Demirci, T Gorkan, E Aktürk… - The Journal of Physical …, 2023 - ACS Publications
Graphene can be hydrogenated fully on both sides and also semihydrogenated on one side
to constitute graphane and graphone, respectively. While both are wide band gap …