[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
[PDF][PDF] Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor
Present memory technologies, including DRAM (dynamic random access memory), SRAM
(static random access memory), and flash, are potentially approaching their scalability limits …
(static random access memory), and flash, are potentially approaching their scalability limits …
Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta 2 O …
S Gao, F Zeng, M Wang, G Wang, C Song… - Physical Chemistry …, 2015 - pubs.rsc.org
The common nonpolar switching behavior of binary oxide-based resistive random access
memory devices (RRAMs) has several drawbacks in future application, such as the …
memory devices (RRAMs) has several drawbacks in future application, such as the …
Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures
SiO2 is the most significantly used insulator layer in semiconductor devices. Its functionality
was recently extended to resistance switching random access memory, where the defective …
was recently extended to resistance switching random access memory, where the defective …
Resistive switching behavior of photochemical activation solution-processed thin films at low temperatures for flexible memristor applications
X Wu, Z Xu, Z Yu, T Zhang, F Zhao, T Sun… - Journal of Physics D …, 2015 - iopscience.iop.org
This study explores deep ultraviolet photochemically activated solution-processed metal-
oxide thin films at room temperature for fabrication of flexible memristor active resistive …
oxide thin films at room temperature for fabrication of flexible memristor active resistive …
Thin TiO x layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta 2 O 5/Ta resistance switching memory
Ta2O5 has been an appealing contender for the resistance switching random access
memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated …
memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated …
Metallic materials deposition: metal‐organic precursors
CH Winter, TJ Knisley, LC Kalutarage… - … of Inorganic and …, 2011 - Wiley Online Library
This review describes metal‐organic precursors for the growth of metal‐containing thin films
by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors …
by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors …
Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices
To initiate resistance switching phenomena, it is usually necessary to apply a strong electric
field to a sample. This forming process poses very serious obstacles in real nanodevice …
field to a sample. This forming process poses very serious obstacles in real nanodevice …
Modeling of current conduction during RESET phase of Pt/Ta2O5/TaOx/Pt bipolar resistive RAM devices
AL Jagath, TN Kumar… - 2018 IEEE 7th Non-Volatile …, 2018 - ieeexplore.ieee.org
This paper presents an enhanced analytical model for bipolar resistive switching in
Pt/Ta2O5/TaOx/Pt Resistive Random-Access Memory (RRAM) devices. The conduction …
Pt/Ta2O5/TaOx/Pt Resistive Random-Access Memory (RRAM) devices. The conduction …
Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
Nonvolatile memories have emerged in recent years and have become a leading candidate
towards replacing dynamic and static random-access memory devices. In this article, the …
towards replacing dynamic and static random-access memory devices. In this article, the …