A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers over a substrate. A material layer stack containing, from outside to …

2016-01-13 Assigned to SANDISK TECHNOLOGIES INC. reassignment SANDISK
TECHNOLOGIES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

A first die includes a three-dimensional memory device and first copper pads. A second die
includes a peripheral logic circuitry containing CMOS devices located on the semiconductor …

2019-01-15 Assigned to SANDISK TECHNOLOGIES LLC reassignment SANDISK
TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

US9230987B2 - Multilevel memory stack structure and methods of manufacturing the same
- Google Patents US9230987B2 - Multilevel memory stack structure and methods of …

(57) ABSTRACT A first stack of alternating layers including first electrically insulating layers
and first sacrificial material layers is formed with first stepped Surfaces. First memory …

(57) ABSTRACT A three dimensional NAND device includes a common vertical channel and
electrically isolated control gate elec trodes on different lateral sides of the channel in each …

US9576967B1 - Method of suppressing epitaxial growth in support openings and three-dimensional
memory device containing non-epitaxial support pillars in the support openings - Google Patents …

A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers provided over a substrate. Annular etch stop material portions are …

(57) ABSTRACT A memory device and a method of fabricating a memory device that
includes forming a protrusion over a Substrate, an etch stop layer over the protrusion, and a …