2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …
discovered through the extensive experimental and theoretical efforts of chemists, material …
Electrostatic gating and intercalation in 2D materials
The doping or the alteration of crystals with guest species to obtain desired properties has
long been a research frontier in materials science. However, the closely packed lattice …
long been a research frontier in materials science. However, the closely packed lattice …
Vertical MoS2 transistors with sub-1-nm gate lengths
Ultra-scaled transistors are of interest in the development of next-generation electronic
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …
Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors
Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-
generation field-effect transistors (FETs). However, it remains challenging to integrate …
generation field-effect transistors (FETs). However, it remains challenging to integrate …
Ballistic two-dimensional InSe transistors
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
Promises and prospects of two-dimensional transistors
Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …
atomically thin channels that could facilitate continued transistor scaling. However, despite …
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann… - Neuromorphic …, 2022 - iopscience.iop.org
Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …
science. In the von Neumann architecture, processing and memory units are implemented …
12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture
Abstract Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides,
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …
2D fin field-effect transistors integrated with epitaxial high-k gate oxide
C Tan, M Yu, J Tang, X Gao, Y Yin, Y Zhang, J Wang… - Nature, 2023 - nature.com
Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …