MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor
We report the electrical properties of Al0. 3Ga0. 7N/GaN heterojunction field effect transistor
(HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor …
(HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor …
Reduction in density of interface traps determined by CV analysis in III-nitride-based MOSHFET structure
An in situ metal-organic chemical vapor phase epitaxy is used to grow a complete
AlGaN/GaN metal oxide semiconductor heterojunction field effect transistor (MOSHFET) …
AlGaN/GaN metal oxide semiconductor heterojunction field effect transistor (MOSHFET) …
Novel Approach To In-situ Mocvd Oxide/dielectric Deposition For Iii-nitride-based Heterojunction Field Effect Transistors
S Hasan - 2023 - scholarcommons.sc.edu
III-Nitride-based compound semiconductors have unique properties such as high bandgap
and high breakdown field, which make them attractive for a variety of applications, including …
and high breakdown field, which make them attractive for a variety of applications, including …
MOCVD-Grown Ga2O3 as a Gate Dielectric on Algan/Gan Based Heterojunction Field Effect Transistor
We report the electrical properties of Al0. 3Ga0. 7N/GaN heterojunction field effect transistor
(HFET) structures with a Ga2O3 passivation layer grown by metal-organic chemical vapor …
(HFET) structures with a Ga2O3 passivation layer grown by metal-organic chemical vapor …