Ultrawideband LNA 1960–2019
S Shahrabadi - IET Circuits, Devices & Systems, 2021 - Wiley Online Library
To the best of the author's knowledge, several studies during 1960–2019 were carried out
on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio …
on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio …
A DC-11.5 GHz low-power, wideband amplifier using splitting-load inductive peaking technique
SF Chao, JJ Kuo, CL Lin, MD Tsai… - IEEE Microwave and …, 2008 - ieeexplore.ieee.org
A DC-11.5 GHz low-power amplifier is developed in commercial 0.13 mum, CMOS
technology. This amplifier design is based on a three-stage shunt-feedback inverter …
technology. This amplifier design is based on a three-stage shunt-feedback inverter …
Dual-resistive feedback wideband LNA for noise cancellation and robust linearization
PBT Huynh, JH Kim, TY Yun - IEEE Transactions on Microwave …, 2022 - ieeexplore.ieee.org
Input-matching, gain, noise figure (NF), linearity, and power consumption are crucial
performance metrics that are tightly coupled in a typical low-noise amplifier (LNA). In this …
performance metrics that are tightly coupled in a typical low-noise amplifier (LNA). In this …
A wideband low-noise variable-gain amplifier with a 3.4 dB NF and up to 45 dB gain tuning range in 130-nm CMOS
FD Baumgratz, C Saavedra, M Steyaert… - … on Circuits and …, 2018 - ieeexplore.ieee.org
A 130 nm CMOS wideband (0.2 to 3.3 GHz) low-noise variable-gain amplifier (LNVGA) with
two active baluns working for phase cancellation is presented herein. The LNVGA aims for a …
two active baluns working for phase cancellation is presented herein. The LNVGA aims for a …
Design of 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique
Q Wan, C Wang - AEU-International Journal of Electronics and …, 2011 - Elsevier
A new low complexity ultra-wideband 3.1–10.6 GHz low noise amplifier (LNA), designed in a
chartered 0.18 μm RFCMOS technology, is presented in this paper. The ultra-wideband LNA …
chartered 0.18 μm RFCMOS technology, is presented in this paper. The ultra-wideband LNA …
Multi-angle recognition of vehicles based on carrier-free UWB sensor and deep residual shrinkage learning
L Zhu, Y Sun, S Zhang - IEEE Microwave and Wireless …, 2022 - ieeexplore.ieee.org
Carrier-free ultra-wideband impulse radars are increasingly used in target detection due to
their high resolution and strong interference capabilities. This letter designs a deep residual …
their high resolution and strong interference capabilities. This letter designs a deep residual …
A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique
R Zhou, J Yang, X Zhao, D Sun, S Liu… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article introduces a variable-gain low-noise amplifier (VG-LNA) designed for IoT
applications. The VG-LNA utilizes a similar architecture to the gm-boost input topology to …
applications. The VG-LNA utilizes a similar architecture to the gm-boost input topology to …
Optimum design of a new ultra-wideband LNA using heuristic multiobjective optimization
This paper presents an optimum design of an ultra-wideband (UWB) 2.5–10.5-GHz low-
noise amplifier (LNA) in 180-nm and 65-nm radiofrequency (RF)-complementary metal …
noise amplifier (LNA) in 180-nm and 65-nm radiofrequency (RF)-complementary metal …
Wideband variable gain amplifier with noise cancellation
AM El-Gabaly, CE Saavedra - Electronics letters, 2011 - IET
A 1–5 GHz noise-cancelling variable gain amplifier is presented in 0.18 µm CMOS
technology that achieves a low noise figure (NF) below 4.8 dB over an 11 dB gain range. Its …
technology that achieves a low noise figure (NF) below 4.8 dB over an 11 dB gain range. Its …
A 0.18 μm CMOS low noise amplifier using a current reuse technique for 3.1–10.6 GHz UWB receivers
C Wang, Q Wan - Journal of Semiconductors, 2011 - iopscience.iop.org
A new, low complexity, ultra-wideband 3.1–10.6 GHz low noise amplifier (LNA), designed in
a chartered 0.18 μm RFCMOS technology, is presented. The ultra-wideband LNA consists of …
a chartered 0.18 μm RFCMOS technology, is presented. The ultra-wideband LNA consists of …