Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
The doping effect on the intrinsic ferroelectricity in hafnium oxide-based nano-ferroelectric devices
Hafnium oxide (HfO2)-based ferroelectric tunnel junctions (FTJs) have been extensively
evaluated for high-speed and low-power memory applications. Herein, we investigated the …
evaluated for high-speed and low-power memory applications. Herein, we investigated the …
Ferroelectricity in HfO2 from a Coordination Number Perspective
Ferroelectricity observed in thin-film HfO2, either doped with Si, Al, and so forth or in the Hf0.
5Zr0. 5O2 form, has gained great technical significance. While a trilinear coupling between …
5Zr0. 5O2 form, has gained great technical significance. While a trilinear coupling between …
[HTML][HTML] Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films
Literature is rich on the study of different strategies to tailor ferroelectric properties of HfO 2.
Among them, chemical doping is the most studied. La doped HfO 2 films have attracted …
Among them, chemical doping is the most studied. La doped HfO 2 films have attracted …
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
Wake-up-free properties and high fatigue resistance of HfxZr1− xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget …
T Onaya, T Nabatame, M Inoue, T Sawada, H Ota… - APL Materials, 2022 - pubs.aip.org
The discovery of ferroelectricity in HfO2-based thin films in 2011 1, 2 introduced the
possibility of integrating and scaling ferroelectric memory devices with three-dimensional …
possibility of integrating and scaling ferroelectric memory devices with three-dimensional …
Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy
P Hao, S Zheng, B Zeng, T Yu, Z Yang… - Advanced Functional …, 2023 - Wiley Online Library
The next‐generation semiconductor memories are essentially required for the
advancements in modern electronic devices. Ferroelectric memories by HfO2‐based …
advancements in modern electronic devices. Ferroelectric memories by HfO2‐based …
Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials
The rapid development in information technologies necessitates rapid advancements of
their supporting hardware. In particular, new computing paradigms are needed to overcome …
their supporting hardware. In particular, new computing paradigms are needed to overcome …