Radiation effects and hardening of MOS technology: Devices and circuits
HL Hughes, JM Benedetto - IEEE Transactions on Nuclear …, 2003 - ieeexplore.ieee.org
Total ionizing dose radiation effects on the electrical properties of metal-oxide-
semiconductor devices and integrated circuits are complex in nature and have changed …
semiconductor devices and integrated circuits are complex in nature and have changed …
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
MR Shaneyfelt, DM Fleetwood… - IEEE transactions on …, 1991 - ieeexplore.ieee.org
The radiation response of MOS devices exposed to/sup 60/Co and low-energy
(approximately 10 keV) X-ray irradiation is evaluated as a function of electric field during …
(approximately 10 keV) X-ray irradiation is evaluated as a function of electric field during …
New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)
DM Fleetwood, SL Miller, RA Reber… - IEEE transactions on …, 1992 - ieeexplore.ieee.org
An analytical model with no free parameters has been developed which accurately
describes thermally-stimulated-current (TSC) measurements spanning more than a factor of …
describes thermally-stimulated-current (TSC) measurements spanning more than a factor of …
[图书][B] Internal photoemission spectroscopy: principles and applications
VV Afanas' ev - 2010 - books.google.com
The monographic book addresses the basics of the charge carrier photoemission from one
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …
Comparison of charge yield in MOS devices for different radiation sources
P Paillet, JR Schwank, MR Shaneyfelt… - … on Nuclear Science, 2002 - ieeexplore.ieee.org
Comparison of charge yield in MOS devices for different radiation sources Page 1 2656 IEEE
TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 49, NO. 6, DECEMBER 2002 Comparison of …
TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 49, NO. 6, DECEMBER 2002 Comparison of …
Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
C Brisset, V Ferlet-Cavrois, O Flament… - … on Nuclear Science, 1996 - ieeexplore.ieee.org
The trapped charge density in the LOCOS bird's beak resulting from irradiating a
conventional NMOSFET has been analysed using a 2D finite element simulation. This paper …
conventional NMOSFET has been analysed using a 2D finite element simulation. This paper …
Calculations of radiation dose-rate sensitivity of bipolar transistors
HP Hjalmarson, RL Pease… - IEEE Transactions on …, 2008 - ieeexplore.ieee.org
Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular
mechanisms are shown to produce reduced effects at high dose rates. Calculations using …
mechanisms are shown to produce reduced effects at high dose rates. Calculations using …
Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices
CX Zhang, EX Zhang, DM Fleetwood… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
The irradiation and annealing responses of 4H-SiC MOS devices with nitrided oxides are
investigated at varying biases. Radiation-induced hole trapping dominates the radiation …
investigated at varying biases. Radiation-induced hole trapping dominates the radiation …
CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)
JL Leray, E Dupont-Nivet, JF Péré… - … on Nuclear science, 1990 - ieeexplore.ieee.org
Hardened CMOS silicon-on-insulator (SOI) 29101 microprocessor elementary cells and
transistors were irradiated at levels between 10 Mrad (SiO/sub 2/) and 1 Grad (SiO/sub …
transistors were irradiated at levels between 10 Mrad (SiO/sub 2/) and 1 Grad (SiO/sub …
Time-dependent hole and electron trapping effects in SIMOX buried oxides
HE Boesch, TL Taylor, LR Hite… - IEEE Transactions on …, 1990 - ieeexplore.ieee.org
The back-channel threshold shift associated with the buried oxide layers of separation by
implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors …
implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors …