During the last decade, photonic crystals, also known as photonic microstructures or
photonic bandgap structures, have matured from an intellectual curiosity concerning …

Techniques have been developed to improve the uniformity of the laser focal profile, to
reduce the ablative Rayleigh–Taylor instability, and to suppress the various laser–plasma …

High-power broad-area diode lasers are the most efficient light sources, with 90-μm stripe
GaAs-based 940-980 nm single emitters delivering> 10 W optical output at a power …

A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light
extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area …

High electro-optical conversion efficiency is one of the most distinctive features of
semiconductor lasers as compared to other types of lasers. Its further increase remains a …

By incorporating a broad transverse waveguide (1.3 μm) in 0.97-μm-emitting InGaAs
(P)/InGaP/GaAs separate-confinement-heterostructure quantum-well diode-laser structures …

970 nm emitting diode laser bars of broad-waveguide design have been optimised for
maximum power conversion efficiency (PCE). 73% PCE at 50 W CW output power is …

For some time already, vertical-cavity surface-emitting lasers (VCSELs) have emerged from
being a laboratory curiosity to an object of industrial mass production. The main applications …

The degradation process of Vertical-cavity Surface-emitting lasers with high speed and a
central wavelength at 850 nm is investigated via constant-current accelerated aging …

This review presents the basic ideas and some examples of the chip technology of high-
power diode lasers (λ= 650 nm− 1060 nm) in connection with the achievements of mounted …