We present a review of existing and potential next-generation far-infrared (20-60 μm) optical
materials and devices. The far-infrared is currently one of the few remaining frontiers on the …

Ultrathin plasmonic metasurfaces have proven their ability to control and manipulate light at
unprecedented levels, leading to exciting optical functionalities and applications. Although …

Carbon (C) doping is essential for producing semi-insulating GaN for power electronics.
However, to date the nature of C doped GaN, especially the lattice site occupation, is not yet …

The use of micro-/nanoelectromechanical resonators for the room temperature detection of
electromagnetic radiation at infrared frequencies has recently been investigated, showing …

We present a comprehensive overview of the optical properties of zinc-blende GaN. By a
variety of different methods, such as temperature-dependent photoluminescence …

Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for
developing sensing applications (including biosensors and implantable sensors). AlN, due …

The dielectric function (DF) of phase-pure cubic AlN films is determined by ellipsometry. The
sharp onset of the imaginary part of the DF defines the direct absorption edge corresponding …

Using X-ray diffraction analysis, atomic force microscopy, IR and UV spectroscopy, the
properties of thin aluminium nitride films (< 200 nm) that were obtained by ion-plasma …

This paper assesses intersubband (ISB) transitions in the 1–10 THz frequency range in
nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi …

In recent years, there has been a growing interest and research focus on infrared optical thin
films as essential components in infrared optical systems. In practical applications, extreme …