Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Back-end-of-line compatible large-area molybdenum disulfide grown on flexible substrate: enabling high-performance low-power memristor applications
Transition-metal dichalcogenides (TMDs) in flexible technology can offer large-area
scalability and high-density integration with a low power consumption. However …
scalability and high-density integration with a low power consumption. However …
Resistive switching crossbar arrays based on layered materials
Resistive switching (RS) devices are metal/insulator/metal cells that can change their
electrical resistance when electrical stimuli are applied between the electrodes, and they …
electrical resistance when electrical stimuli are applied between the electrodes, and they …
Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties
Hafnium oxide plays an important role as a dielectric material in various thin-film electronic
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity
A design concept of phase-separated amorphous nanocomposite thin films is presented that
realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are …
realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are …
Dynamic Response and Swift Recovery of Filament Heater‐Integrated Low‐Power Transparent CNT Gas Sensor
Designing a transparent carbon nanotube (CNT) gas sensor for nitrogen dioxide (NO2)
detection at room temperature (RT), which is unaffected by humidity, is a critical challenge in …
detection at room temperature (RT), which is unaffected by humidity, is a critical challenge in …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
This work reports on the bipolar resistive switching (RS) characteristics and possible
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …
Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide
Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …