Two-dimensional materials prospects for non-volatile spintronic memories

H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny… - Nature, 2022 - nature.com
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

Two-dimensional devices and integration towards the silicon lines

S Wang, X Liu, M Xu, L Liu, D Yang, P Zhou - Nature materials, 2022 - nature.com
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

Ballistic two-dimensional InSe transistors

J Jiang, L Xu, C Qiu, LM Peng - Nature, 2023 - nature.com
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

Transistors based on two-dimensional materials for future integrated circuits

S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

J Zhu, JH Park, SA Vitale, W Ge, GS Jung… - Nature …, 2023 - nature.com
Abstract Two-dimensional (2D) materials are promising candidates for future electronics due
to their excellent electrical and photonic properties. Although promising results on the wafer …

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

X Yang, J Li, R Song, B Zhao, J Tang, L Kong… - Nature …, 2023 - nature.com
Abstract Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have
attracted tremendous interest for transistor applications. However, the fabrication of 2D …

Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices

Y Lei, T Zhang, YC Lin, T Granzier-Nakajima… - ACS Nanoscience …, 2022 - ACS Publications
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …

Atomistic insight into the epitaxial growth mechanism of single-crystal two-dimensional transition-metal dichalcogenides on Au (111) substrate

D Ding, S Wang, Y Xia, P Li, D He, J Zhang, S Zhao… - ACS …, 2022 - ACS Publications
A mechanistic understanding of interactions between atomically thin two-dimensional (2D)
transition-metal dichalcogenides (TMDs) and their growth substrates is important for …

Challenges for nanoscale CMOS logic based on two-dimensional materials

T Knobloch, S Selberherr, T Grasser - Nanomaterials, 2022 - mdpi.com
For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D)
materials are a potential replacement for silicon since even atomically thin 2D …

Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2

Z Sun, CS Pang, P Wu, TYT Hung, MY Li, SL Liew… - ACS …, 2022 - ACS Publications
Scaling of monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs) is
an important step toward evaluating the application space of TMD materials. Although some …