A review of blue light emitting diodes for future solid state lighting and visible light communication applications
This paper reviews the rapid progress being made in the developments of organic/inorganic
blue light emitting diodes (LEDs). Blue LEDs exhibits outstanding electrical and optical …
blue light emitting diodes (LEDs). Blue LEDs exhibits outstanding electrical and optical …
Current-and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes
We investigate the current-dependent and temperature-dependent efficiency droops (" J-
droop" and" T-droop", respectively) in InGaN-based blue and AlGaInP-based red light …
droop" and" T-droop", respectively) in InGaN-based blue and AlGaInP-based red light …
Optoelectronic performance variations in InGaN/GaN multiple-quantum-well light-emitting diodes: effects of potential fluctuation
We investigate the cause of the optoelectronic performance variations in InGaN/GaN
multiple-quantum-well blue light-emitting diodes, using three different samples from an …
multiple-quantum-well blue light-emitting diodes, using three different samples from an …
Enhanced radiative recombination rate by local potential fluctuation in InGaN/AlGaN near-ultraviolet light-emitting diodes
We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-
quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different …
quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different …
Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
This work investigates the turn-on voltage (V on) estimation methods from experimental data
of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra …
of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra …
Measurement of the Piezoelectric Field in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes by Electroreflectance Spectroscopy
The piezoelectric field in InGaN/AlGaN-based multiple-quantum-well (MQW) near-ultraviolet
light-emitting diodes (LEDs) was measured by electroreflectance and photocurrent …
light-emitting diodes (LEDs) was measured by electroreflectance and photocurrent …
Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green …
The internal electric field caused by the strain-induced piezoelectric polarization in InGaN-
based single-or multiple-quantum-well light-emitting diodes (LEDs) is measured by using …
based single-or multiple-quantum-well light-emitting diodes (LEDs) is measured by using …
Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple‐Quantum‐Well Near‐Ultraviolet Light‐Emitting Diodes
Three similar‐structure InGaN/AlGaN multiple‐quantum‐well near‐ultraviolet (NUV) light‐
emitting diodes (LEDs) are utilized to investigate the microscopic effect of defects on strain …
emitting diodes (LEDs) are utilized to investigate the microscopic effect of defects on strain …
[PDF][PDF] Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
S Maksong, T Yemor, S Yanmanee, A Kono, M Tokito… - 2023 - researchgate.net
This work investigates the turn-on voltage (Von) estimation methods from experimental data
of InGaN-based multiple-quantumwell light-emitting diodes (LEDs) with emission spectra …
of InGaN-based multiple-quantumwell light-emitting diodes (LEDs) with emission spectra …
[PDF][PDF] Optische Untersuchung von semipolaren InGaN/GaN-Quantengräben mit der Kristallorientierung (202̄1̄) und (202̄1)
S Freytag - 2020 - repo.bibliothek.uni-halle.de
Die Gruppe-III-Nitride mit ihren Vertretern GaN, InN und AlN bilden zusammen mit ihren
ternären Verbindungshalbleitern ein Materialsystem mit außergewöhnlichen Eigenschaften …
ternären Verbindungshalbleitern ein Materialsystem mit außergewöhnlichen Eigenschaften …