A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures
Y Xing, L Wang, D Yang, Z Wang, Z Hao, C Sun… - Scientific Reports, 2017 - nature.com
Based on carrier rate equation, a new model is proposed to explain the non-exponential
nature of time-resolved photoluminescence (TRPL) decay curves in the polar InGaN/GaN …
nature of time-resolved photoluminescence (TRPL) decay curves in the polar InGaN/GaN …
In‐situ observation of InGaN quantum well decomposition during growth of laser diodes
V Hoffmann, A Mogilatenko, U Zeimer… - Crystal Research …, 2015 - Wiley Online Library
The deterioration of the InGaN active region of laser diode structures emitting around 440
nm is observed in‐situ during epitaxial growth and analyzed ex‐situ by …
nm is observed in‐situ during epitaxial growth and analyzed ex‐situ by …
Reduction in the photoluminescence intensity caused by ultrathin gan quantum barriers in InGaN/GaN multiple quantum wells
W Liu, F Liang, D Zhao, J Yang, P Chen, Z Liu - Crystals, 2022 - mdpi.com
The optical properties of InGaN/GaN violet light-emitting multiple quantum wells with
different thicknesses of GaN quantum barriers are investigated experimentally. When the …
different thicknesses of GaN quantum barriers are investigated experimentally. When the …
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
V Hoffmann, A Mogilatenko, C Netzel, U Zeimer… - Journal of crystal …, 2014 - Elsevier
The influence of the (In) GaN quantum barrier growth temperature on the structural
properties of the active region of blue–violet laser diodes has been investigated. Therefore …
properties of the active region of blue–violet laser diodes has been investigated. Therefore …
Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
JX Cai, HQ Sun, H Zheng, PJ Zhang… - Chinese Physics B, 2014 - iopscience.iop.org
GaN-based multiple quantum well light-emitting diodes (LEDs) with conventional and
superlattice barriers have been investigated numerically. Simulation results demonstrate …
superlattice barriers have been investigated numerically. Simulation results demonstrate …
Study on carrier lifetimes in InGaN multi‐quantum well with different barriers by time‐resolved photoluminescence
The carrier lifetimes depending on emission photo energy of InGaN multi‐quantum well
(MQW) with different barriers are studied by time‐resolved photoluminescence (TRPL). A …
(MQW) with different barriers are studied by time‐resolved photoluminescence (TRPL). A …
[PDF][PDF] 氢化物气相外延生长高质量GaN 膜生长参数优化研究
张李骊， 刘战辉， 修向前， 张荣， 谢自力 - 物理学报, 2013 - wulixb.iphy.ac.cn
系统研究了低温成核层生长时间, 高温生长时的V/III 比以及生长温度对氢化物气相外延生长GaN
膜晶体质量的影响. 研究发现合适的低温成核层为后续高温生长提供成核中心 …
膜晶体质量的影响. 研究发现合适的低温成核层为后续高温生长提供成核中心 …
Improved photoluminescence in InGaN/GaN strained quantum wells
LZ Ding, H Chen, M He, Y Jiang, TP Lu… - Chinese Physics …, 2014 - iopscience.iop.org
The influence of strain accumulation on optical properties is investigated for InGaN/GaN-
based blue light-emitting diodes grown by metal organic vapor-phase epitaxy. It is found that …
based blue light-emitting diodes grown by metal organic vapor-phase epitaxy. It is found that …
Double AlGaN/InGaN superlattice electron-blocking layer improved performance of InGaN/GaN light-emitting diodes
X Chen, H Gu, X Chen - Optical Engineering, 2018 - spiedigitallibrary.org
The InGaN-based blue light-emitting diodes (LEDs) with double AlGaN/InGaN superlattice
(SL) electron-blocking layers are investigated theoretically. The simulation results indicate …
(SL) electron-blocking layers are investigated theoretically. The simulation results indicate …
[PDF][PDF] InGaN 蓝光LED 内量子效率的评测
汪莱， 邢雨辰， 郝智彪， 罗毅， 孙长征… - 中国科学: 物理学, 力学 …, 2015 - researchgate.net
摘要LED 的内量子效率是评价LED 性能的重要指标. 本文详细介绍了目前针对GaN 基LED
内量子效率的多种评测方法, 包括: 变温光致荧光方法, 变激发功率光致荧光方法 …
内量子效率的多种评测方法, 包括: 变温光致荧光方法, 变激发功率光致荧光方法 …