Low-frequency noise in downscaled silicon transistors: Trends, theory and practice
O Marinov, MJ Deen, JA Jiménez-Tejada - Physics Reports, 2022 - Elsevier
By the continuing downscaling of sub-micron transistors in the range of few to sub-
decananometers, we focus on the increasing relative level of the low-frequency noise in …
decananometers, we focus on the increasing relative level of the low-frequency noise in …
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
Electroforming and resistive switching in silicon dioxide resistive memory devices
Electroforming and resistive switching in SiO2 materials are investigated by controlling the
annealing temperature, etching time and operating ambient. Thermal anneal in reducing …
annealing temperature, etching time and operating ambient. Thermal anneal in reducing …
[图书][B] Random telegraph signals in semiconductor devices
E Simoen, C Claeys - 2016 - iopscience.iop.org
Following their first observation in 1984, random telegraph signals (RTSs) were initially a
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …
Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer
A O'Mahony, S Monaghan, G Provenzano… - Applied Physics …, 2010 - pubs.aip.org
High mobility III-V substrates with high-k oxides are required for device scaling without loss
of channel mobility. Interest has focused on the self-cleaning effect on selected III-V …
of channel mobility. Interest has focused on the self-cleaning effect on selected III-V …
Low frequency noise and gate bias instability in normally OFF AlGaN/GaN HEMTs
In this brief, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-high-
electron mobility transistors. Pulsed IV characteristics and low-frequency-noise …
electron mobility transistors. Pulsed IV characteristics and low-frequency-noise …
Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs
M Toledano-Luque, B Kaczer, E Simoen… - 2012 IEEE …, 2012 - ieeexplore.ieee.org
The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled
SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the …
SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the …
Impact of trap localization on low-frequency noise in nanoscale device
JW Lee, WS Yun, G Ghibaudo - Journal of Applied Physics, 2014 - pubs.aip.org
The impact of oxide trap localization concerning low-frequency noise has been investigated
for nanoscale field effect transistors. Various low-frequency noise behaviors induced by …
for nanoscale field effect transistors. Various low-frequency noise behaviors induced by …
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was
investigated using low-frequency noise (LFN) measurements for the first time. The current …
investigated using low-frequency noise (LFN) measurements for the first time. The current …
Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
F Palumbo, M Eizenberg - Journal of Applied Physics, 2014 - pubs.aip.org
Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities
to predict long-time degradation as well as the impact of process changes on degradation …
to predict long-time degradation as well as the impact of process changes on degradation …